题名 | Al Reaction-Induced Conductive a-InGaZnO as Pixel Electrode for Active-Matrix Quantum-Dot LED Displays |
作者 | |
发表日期 | 2022-05
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DOI | |
发表期刊 | |
ISSN | 1558-0563
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卷号 | 43期号:5页码:749-752 |
关键词 | |
相关链接 | [IEEE记录] |
收录类别 | |
学校署名 | 第一
|
EI入藏号 | 20221111799834
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EI主题词 | Amorphous films
; Amorphous semiconductors
; Electrodes
; Gallium compounds
; II-VI semiconductors
; Organic light emitting diodes (OLED)
; Oxide semiconductors
; Pixels
; Semiconducting indium compounds
; Semiconductor quantum dots
; Thin film circuits
; Thin film transistors
; Thin films
; Tin oxides
; Zinc oxide
|
EI分类号 | Semiconducting Materials:712.1
; Compound Semiconducting Materials:712.1.2
; Semiconductor Devices and Integrated Circuits:714.2
; Nanotechnology:761
; Inorganic Compounds:804.2
; Crystalline Solids:933.1
; Amorphous Solids:933.2
|
ESI学科分类 | ENGINEERING
|
来源库 | IEEE
|
全文链接 | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9732355 |
引用统计 |
被引频次[WOS]:5
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/327836 |
专题 | 工学院_电子与电气工程系 |
作者单位 | 1.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, P. R. China. 2.School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, P. R. China. |
第一作者单位 | 电子与电气工程系 |
第一作者的第一单位 | 电子与电气工程系 |
推荐引用方式 GB/T 7714 |
Chen,Changyuan,Su,Sikai,Zhang,Shengdong,et al. Al Reaction-Induced Conductive a-InGaZnO as Pixel Electrode for Active-Matrix Quantum-Dot LED Displays[J]. IEEE Electron Device Letters,2022,43(5):749-752.
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APA |
Chen,Changyuan,Su,Sikai,Zhang,Shengdong,&Chen,Shuming.(2022).Al Reaction-Induced Conductive a-InGaZnO as Pixel Electrode for Active-Matrix Quantum-Dot LED Displays.IEEE Electron Device Letters,43(5),749-752.
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MLA |
Chen,Changyuan,et al."Al Reaction-Induced Conductive a-InGaZnO as Pixel Electrode for Active-Matrix Quantum-Dot LED Displays".IEEE Electron Device Letters 43.5(2022):749-752.
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条目包含的文件 | 条目无相关文件。 |
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