Bending strain effects on the optical and optoelectric properties of GaN nanowires

Fu，Xuewen1; Nie，Haixia1; Sun，Zepeng1; Feng，Min1; Chen，Xiang1; Liu，Can1; Liu，Fang1; Yu，Dapeng2; Liao，Zhimin3,4

2022

10.1007/s12274-022-4080-5

Nano Research   影响因子和分区

1998-0124

1998-0000

Elastic strain has been an important method to regulate the electronic structures and physical properties of nanoscale semiconductors due to the promising potentials in improving the performance of their optoelectronic devices. Here, we report the investigation of bending strain effects on the optical and optoelectric properties of individual gallium nitride (GaN) nanowires (NWs). By charactering the near-band emission spectrum of individual GaN NWs at different bending strains with low temperature cathodoluminescence (CL), we reveal that the near-band emission splits into two peaks, where the low energy peak displays a linear redshift with increasing the bending strain while the high energy one shows a slight blueshift. Further localized ultraviolet (UV) photoresponse measurements illustrate that the photoresponse of the GaN NWs shows a linear increase with the bending train, and the maximum enhancement is more than two orders of magnitude. The experimental observations are well interpreted by theoretical calculations on the strain modulation on the electronic band structure of GaN combined with analysis of carrier dynamics and optical waveguide effect in the bending strain field. Our results not only shed light on the bending strain effects on the optical and optoelectric properties of semiconductors, but also hold potential to help the future design of high performance nano-optoelectric devices.[Figure not available: see fulltext.]

bending strain cathodoluminescence energy band structure GaN nanowires ultraviolet photoresponse

SCI ; EI

英语

其他

WOS:000758993200007

20220811695326

Band structure ; Cathodoluminescence ; Emission spectroscopy ; Gallium nitride ; III-V semiconductors ; Nanowires ; Optoelectronic devices ; Temperature ; Wide band gap semiconductors

Thermodynamics:641.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Light/Optics:741.1 ; Optical Devices and Systems:741.3 ; Nanotechnology:761 ; Solid State Physics:933

2-s2.0-85124976828

Scopus

1.Ultrafast Electron Microscopy Laboratory,The MOE Key Laboratory of Weak-Light Nonlinear Photonics,School of Physics,Nankai University,Tianjin,300071,China
2.Shenzhen Institute for Quantum Science and Engineering,and Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
3.State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics,School of Physics,Peking University,Beijing,100871,China
4.Peking University Yangtze Delta Institute of Optoelectronics,Nantong,226010,China

Fu，Xuewen,Nie，Haixia,Sun，Zepeng,et al. Bending strain effects on the optical and optoelectric properties of GaN nanowires[J]. Nano Research,2022,15:4575-4581.

Fu，Xuewen.,Nie，Haixia.,Sun，Zepeng.,Feng，Min.,Chen，Xiang.,...&Liao，Zhimin.(2022).Bending strain effects on the optical and optoelectric properties of GaN nanowires.Nano Research,15,4575-4581.

Fu，Xuewen,et al."Bending strain effects on the optical and optoelectric properties of GaN nanowires".Nano Research 15(2022):4575-4581.