Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process

He，Jiaqi1; Wang，Qing2; Zhou，Guangnan2; Li，Wenmao2; Jiang，Yang2; Qiao，Zepeng2; Tang，Chuying2; Li，Gang3; Yu，Hongyu2

2022-04

10.1109/LED.2022.3149943

IEEE Electron Device Letters   影响因子和分区

1558-0563

GaN normally-off MIS-HEMTs regrowth in-situ SiNₓ on-resistance

SCI ; EI

第一 ; 通讯

20220811676711

Alumina ; Aluminum gallium nitride ; Aluminum oxide ; Atomic layer deposition ; Dielectric materials ; Drain current ; Energy gap ; Gallium nitride ; Gate dielectrics ; Hafnium oxides ; Heterojunctions ; High electron mobility transistors ; Hysteresis ; III-V semiconductors ; Interface states ; Semiconductor alloys ; Threshold voltage ; Two dimensional electron gas ; Wide band gap semiconductors

Protection Methods:539.2.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Dielectric Materials:708.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2 ; Coating Techniques:813.1 ; Classical Physics; Quantum Theory; Relativity:931 ; High Energy Physics; Nuclear Physics; Plasma Physics:932 ; Crystal Growth:933.1.2 ; Systems Science:961

ENGINEERING

IEEE

1.Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Hong Kong and School of Microelectronics, Southern University of Science and Technology, Shenzhen, China. (e-mail: hjq447052447@163.com)
2.School of Microelectronics and Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, and GaN Device Engineering Technology Research Center of Guangdong, Southern University of Science and Technology, Shenzhen, China.
3.Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Hong Kong.

He，Jiaqi,Wang，Qing,Zhou，Guangnan,et al. Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process[J]. IEEE Electron Device Letters,2022,43(4):529-532.

He，Jiaqi.,Wang，Qing.,Zhou，Guangnan.,Li，Wenmao.,Jiang，Yang.,...&Yu，Hongyu.(2022).Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process.IEEE Electron Device Letters,43(4),529-532.

He，Jiaqi,et al."Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process".IEEE Electron Device Letters 43.4(2022):529-532.