Ultrathin SnO2Buffer Layer Aids in Interface and Band Engineering for Sb2(S,Se)3Solar Cells with over 8% Efficiency

Mao，Xiaoli1; Bian，Moran1; Wang，Changxue1; Zhou，Ru2; Wan，Lei2; Zhang，Zibin1; Zhu，Jun3; Chen，Wangchao4; Shi，Chengwu4; Xu，Baomin5

2021

10.1021/acsaem.1c03660

ACS Applied Energy Materials   影响因子和分区

2574-0962

2574-0962

The environmentally friendly antimony selenosulfide (Sb2(S,Se)3) semiconductor emerges as a promising light harvester for thin-film photovoltaics owing to its excellent material and optoelectronic properties. The alloyed Sb2(S,Se)3 is endowed with the complementary benefits of Sb2S3 and Sb2Se3, such as a tunable band gap within the range of 1.10-1.70 eV. In Sb2(S,Se)3 solar cells, the n-type semiconductor CdS is extensively used as an electron transport layer (ETL), which plays a role in extracting photogenerated electrons from absorbers and transporting them to conducting substrates. However, the unsatisfactory ETL/absorber interface contact often involves severe interface recombination. Herein, we report that an ultrathin SnO2 buffer layer of ∼10 nm applied on the high-roughness fluorine-doped tin oxide (FTO) substrate aids in effective interface and band engineering for superstrate CdS/Sb2(S,Se)3 solar cells. Careful characterizations confirm that the ultrathin SnO2 buffer layer plays a positive role in inhibiting the shunt current leakage at the ETL/absorber interface and manipulating the cascade energy band structure for more effective interface passivation and efficient electron extraction. Consequently, the resultant SnO2/CdS ETL-based Sb2(S,Se)3 solar cells exhibited a remarkable device efficiency of 8.67%, coupled with a considerable open-circuit voltage of 0.72 V. Our finding demonstrates a facile approach to engineer the interface contact and band offset to accelerate electron extraction, transport, and collection efficiencies.

band engineering electron transport layer interface engineering Sb2(S,Se)3 thin-film solar cell

SCI ; EI

英语

通讯

Fundamental Research Funds for the Central Universities[PA2021KCPY0036] ; National Natural Science Foundation of Anhui Province[2108085ME147] ; National Natural Science Foundation of China[51602088,"U19A2089"] ; Open Fund of the Key Laboratory of Photovoltaic and Energy Conservation Materials, Chinese Academy of Sciences[PECL2019KF007]

Chemistry ; Energy & Fuels ; Materials Science

Chemistry, Physical ; Energy & Fuels ; Materials Science, Multidisciplinary

WOS:000813024200001

AMER CHEMICAL SOC

20221311833104

Antimony compounds ; Buffer layers ; Cadmium sulfide ; Cadmium sulfide solar cells ; Cell engineering ; Electron transport properties ; Energy gap ; Extraction ; II-VI semiconductors ; Nanocomposites ; Open circuit voltage ; Selenium compounds ; Solar absorbers ; Substrates ; Thin films ; Tin oxides

Biomedical Engineering:461.1 ; Solar Energy and Phenomena:657.1 ; Solar Cells:702.3 ; Semiconducting Materials:712.1 ; Nanotechnology:761 ; Chemical Operations:802.3 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2 ; Coating Materials:813.2 ; Solid State Physics:933 ; Crystalline Solids:933.1

2-s2.0-85126774323

Scopus

1.School of Electronic Science and Applied Physics,Hefei University of Technology,Hefei,230009,China
2.School of Electrical Engineering and Automation,Hefei University of Technology,Hefei,230009,China
3.Special Display and Imaging Technology Innovation Center of Anhui Province,Academy of Opto-Electric Technology,Hefei University of Technology,Hefei,230009,China
4.School of Chemistry and Chemical Engineering,Hefei University of Technology,Hefei,230009,China
5.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China

Mao，Xiaoli,Bian，Moran,Wang，Changxue,et al. Ultrathin SnO2Buffer Layer Aids in Interface and Band Engineering for Sb2(S,Se)3Solar Cells with over 8% Efficiency[J]. ACS Applied Energy Materials,2021,5(3):3022-3033.

Mao，Xiaoli.,Bian，Moran.,Wang，Changxue.,Zhou，Ru.,Wan，Lei.,...&Xu，Baomin.(2021).Ultrathin SnO2Buffer Layer Aids in Interface and Band Engineering for Sb2(S,Se)3Solar Cells with over 8% Efficiency.ACS Applied Energy Materials,5(3),3022-3033.

Mao，Xiaoli,et al."Ultrathin SnO2Buffer Layer Aids in Interface and Band Engineering for Sb2(S,Se)3Solar Cells with over 8% Efficiency".ACS Applied Energy Materials 5.3(2021):3022-3033.