A 1.1-V 26.2-ppm/°C Sub-Bandgap Voltage Reference with 6.5-nW Power Consumption Composed of Subthreshold CMOSs and Single BJT

Hu，Haoyu1,2; Zhan，Chenchang1; Wang，Lidan1

10.1109/ICTA53157.2021.9661982

2021

978-1-6654-1748-8

2021 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2021

169-170

24-26 Nov. 2021

Zhuhai, China

This paper illustrates a methodology to design an ultra-low power bandgap voltage reference with high accuracy to counteract the effect of temperature using single BJT and MOSFETs working in subthreshold region. The study provides a new insight into compensation of complementary-to-absolute-temperature(CTAT) with a nano-watt proportional-to-absolute-temperature(PTAT) voltage generator with process variation brought by threshold voltage reduced. Designed in a 180-nm CMOS process technology, the circuit has a measured 26.2-ppm/°C temperature coefficient under a wide range of-40°C~125°C and an overall 0.234% variation coefficient among 9 chips with an active area of 0.0264-mm2. The experimental result shows the voltage reference can operate with a supply voltage down to 1.1-V and a full frequency PSRR better than-35dB while the power consumption is only 6.435-nW.

Bandgap CMOS subthreshold ultra-low power(ULP) voltage reference

第一 ; 通讯

英语

EI

20220811683243

CMOS integrated circuits ; Electric power utilization ; Temperature ; Threshold voltage ; Voltage measurement

Thermodynamics:641.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Electric Power Systems:706.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Electric Variables Measurements:942.2

2-s2.0-85124793625

Scopus

1.Southern University of Science and Technology,School of Microelectronics,Shenzhen,China
2.University Key Laboratory of Advanced Wireless Communications of Guangdong Province,Southern University of Science and Technology,Shenzhen,China

Hu，Haoyu,Zhan，Chenchang,Wang，Lidan. A 1.1-V 26.2-ppm/°C Sub-Bandgap Voltage Reference with 6.5-nW Power Consumption Composed of Subthreshold CMOSs and Single BJT[C],2021:169-170.