南方科技大学知识苑(SUSTech KC): Engineering Low Dark Current Density for Ge-on-Si Photodiodes

题名	Engineering Low Dark Current Density for Ge-on-Si Photodiodes
作者	Postelnicu，Eveline 1; Marzen，Stephanie 1; Wen，Ruitao2 ; Ma，Danhao 1; Wang，Baoming 1; Wada，Kazumi 1; Michel，Jurgen 1; Kimerling，Lionel 1
DOI	10.1109/GFP51802.2021.9673841
发表日期	2021
会议名称	17th IEEE International Conference on Group IV Photonics (GFP)
ISSN	1949-2081
ISBN	978-1-6654-4675-4
会议录名称	IEEE International Conference on Group IV Photonics GFP
卷号	2021-December
页码	1-2
会议日期	DEC 07-10, 2021
会议地点	null,null,ELECTR NETWORK
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
摘要	We have studied the roles of 425-800C post-growth annealing and ALD surface passivation on the dark current of Geon-Si p-i-n photodiodes. Sidewall passivation via Al2O3 deposition at 250C removes all peripheral leakage components. These processes yield a mean value of Jd = 160nA/cm2 at -1V.
关键词	germanium photodiodes silicon photonics
学校署名	其他
语种	英语
相关链接	[Scopus记录]
收录类别	CPCI-S ; EI
WOS研究方向	Engineering ; Optics ; Physics
WOS类目	Engineering, Electrical & Electronic ; Optics ; Physics, Applied
WOS记录号	WOS:000783824500015
EI入藏号	20220811673407
EI主题词	Alumina ; Atomic layer deposition ; Germanium ; Germanium compounds ; Passivation ; Photodiodes ; Silicon photonics
EI分类号	Protection Methods:539.2.1 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Light/Optics:741.1 ; Inorganic Compounds:804.2 ; Coating Techniques:813.1 ; Crystal Growth:933.1.2
Scopus记录号	2-s2.0-85124697286
来源库	Scopus
全文链接	https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9673841
引用统计	被引频次[WOS]：0
成果类型	会议论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/328103
专题	南方科技大学工学院_材料科学与工程系
作者单位	1.Massachusetts Institute of Technology,Cambridge,United States 2.Southern University of Science and Technology,Shenzhen,China
推荐引用方式 GB/T 7714	Postelnicu，Eveline,Marzen，Stephanie,Wen，Ruitao,et al. Engineering Low Dark Current Density for Ge-on-Si Photodiodes[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2021:1-2.