E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability

Hua，Mengyuan; Chen，Junting; Wang，Chengcai; Li，Lingling; Liu，Ling; Zheng，Zheyang; Chen，Kevin J.

10.1109/ASICON52560.2021.9620369

2021

2162-7541

2162-755X

978-1-6654-1149-3

Proceedings of International Conference on ASIC

1-4

26-29 Oct. 2021

Kunming, China

A novel p-GaN gate topology is proposed to simultaneously achieve high threshold voltage (VTH), low reverse-conduction loss, and enhanced VTH stability in E-mode p-GaN gate HEMT. The proposed gate structure consists of a conventional Schottky-type p-GaN gate and a normally-on p-FET bridge connecting source and gate. By modulating the VTH of the p-FET, a wide-range positive VTH can be achieved without suffering subthreshold voltage degradation. Owing to the well-grounded p-GaN through the normally-on p-channel, floating p-GaN layer is eliminated, and stable VTH can be achieved. In addition, the normally-on p-FET bridge can intrinsically decouple the reverse-conduction turn-on voltage (VRT) from the forward threshold voltage (VTH) without any area sacrifice, which enables separate engineering of VRT and VTH so that low-loss reverse conduction and high threshold voltage can be simultaneously realized.

Degradation Conferences Bridge circuits Logic gates HEMTs Threshold voltage Topology

第一

英语

EI

20220311478729

Bridges ; Computer circuits ; Electric grounding ; High electron mobility transistors ; III-V semiconductors ; Threshold voltage ; Wide band gap semiconductors

Bridges:401.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Computer Circuits:721.3

2-s2.0-85122885069

Scopus

Southern University of Science and Technology,Department of Electrical and Electronic Engineering,Shenzhen,China

Hua，Mengyuan,Chen，Junting,Wang，Chengcai,et al. E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability[C],2021:1-4.