Growth of wafer-scale graphene-hexagonal boron nitride vertical heterostructures with clear interfaces for obtaining atomically thin electrical analogs

Yang，Huihui1,2; Wang，Gang3; Guo，Yanming4; Wang，Lifeng5; Tan，Biying2; Zhang，Shichao2; Zhang，Xin2; Zhang，Jia2; Shuai，Yong4; Lin，Junhao3; Jia，Dechang1; Hu，Ping An1,2

2022-02-10

10.1039/d1nr06004j

Nanoscale   影响因子和分区

2040-3364

2040-3372

Two-dimensional (2D) integrated circuits based on graphene (Gr) heterostructures have emerged as next-generation electronic devices. However, it is still challenging to produce high-quality and large-area Gr/hexagonal boron nitride (h-BN) vertical heterostructures with clear interfaces and precise layer control. In this work, a two-step metallic alloy-assisted epitaxial growth approach has been demonstrated for producing wafer-scale vertical hexagonal boron nitride/graphene (h-BN/Gr) heterostructures with clear interfaces. The heterostructures maintain high uniformity while scaling up and thickening. The layer number of both h-BN and graphene can be independently controlled by tuning the growth process. Furthermore, conductance measurements confirm that electrical hysteresis disappears on h-BN/Gr field-effect transistors, which is attributed to the h-BN dielectric surface. Our work blazes a trail toward next-generation graphene-based analog devices.

SCI ; EI

英语

其他

WOS:000763001800001

20221411908259

Field effect transistors ; Graphene ; Graphene transistors ; III-V semiconductors ; Nitrides ; Quality control

Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2 ; Quality Assurance and Control:913.3

2-s2.0-85127306449

Scopus

1.Institute for Advanced Ceramics,School of Materials Science and Engineering,Harbin Institute of Technology,Harbin,Heilongjiang,150080,China
2.Key Laboratory of Micro-Systems and Micro-Structures Manufacturing of Ministry of Education,Harbin Institute of Technology,Harbin,150080,China
3.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
4.School of Energy Science and Engineering,Harbin Institute of Technology,Harbin,150080,China
5.Institute for Frontier Materials,Deakin University,Waurn Ponds,Australia

Yang，Huihui,Wang，Gang,Guo，Yanming,et al. Growth of wafer-scale graphene-hexagonal boron nitride vertical heterostructures with clear interfaces for obtaining atomically thin electrical analogs[J]. Nanoscale,2022,14(11):4204-4215.

Yang，Huihui.,Wang，Gang.,Guo，Yanming.,Wang，Lifeng.,Tan，Biying.,...&Hu，Ping An.(2022).Growth of wafer-scale graphene-hexagonal boron nitride vertical heterostructures with clear interfaces for obtaining atomically thin electrical analogs.Nanoscale,14(11),4204-4215.

Yang，Huihui,et al."Growth of wafer-scale graphene-hexagonal boron nitride vertical heterostructures with clear interfaces for obtaining atomically thin electrical analogs".Nanoscale 14.11(2022):4204-4215.