Micro-Light-Emitting Diodes Based on InGaN Materials with Quantum Dots

Liu，Zhaojun1; Hyun，Byung Ryool1; Sheng，Yujia1,2; Lin，Chun Jung3; Changhu，Mengyuan1; Lin，Yonghong1; Ho，Chih Hsiang4; He，Jr Hau2; Kuo，Hao Chung3

2021

10.1002/admt.202101189

Advanced Materials Technologies   影响因子和分区

2365-709X

Micro-light-emitting diodes (Micro-LEDs) based on gallium nitride (GaN) materials offer versatile platforms for various applications, including displays, data communication tools, photodetectors, and sensors. In particular, the introduction of Micro-LEDs in the optoelectronic industry enables the development of novel short-distance wireless communication applications for the Internet of Things as well as near-to-eye displays for virtual reality and augmented reality. Micro-LEDs used in conjunction with colloidal quantum dots (QDs) as color-conversion layers provide efficient full-color displays as well as white LEDs for high-speed visible light communications (VLCs). Here, the latest progress on full-color Micro-LED displays with a printed QD color conversion layer, GaN material-based Micro-LEDs for VLC systems, and the photostability of novel QD materials for Micro-LEDs is comprehensively reviewed. Outlooks on the efficiency of Micro-LEDs with sizes ≤10 µm, QD stability issues, and flexible Micro-LED displays are also provided.

SCI ; EI

英语

第一

WOS:000735913300001

20220111425140

Augmented reality ; Color ; Flexible displays ; Gallium alloys ; Gallium nitride ; III-V semiconductors ; Indium alloys ; Light ; Nanocrystals ; Organic light emitting diodes (OLED) ; Semiconductor alloys ; Virtual reality

Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Computer Peripheral Equipment:722.2 ; Computer Software, Data Handling and Applications:723 ; Light/Optics:741.1 ; Nanotechnology:761 ; Crystalline Solids:933.1

2-s2.0-85122093227

Scopus

1.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China
2.Department of Materials Science and Engineering,City University of Hong Kong,999077,Hong Kong
3.Department of Photonics and Institute of Electro-Optical Engineering,College of Electrical and Computer Engineering,National Chiao Tung University,Hsinchu,30010,Taiwan
4.Raysolution LLC,San Jose,95129,United States

Liu，Zhaojun,Hyun，Byung Ryool,Sheng，Yujia,et al. Micro-Light-Emitting Diodes Based on InGaN Materials with Quantum Dots[J]. Advanced Materials Technologies,2021,7.

Liu，Zhaojun.,Hyun，Byung Ryool.,Sheng，Yujia.,Lin，Chun Jung.,Changhu，Mengyuan.,...&Kuo，Hao Chung.(2021).Micro-Light-Emitting Diodes Based on InGaN Materials with Quantum Dots.Advanced Materials Technologies,7.

Liu，Zhaojun,et al."Micro-Light-Emitting Diodes Based on InGaN Materials with Quantum Dots".Advanced Materials Technologies 7(2021).