Bridging the gap between atomically thin semiconductors and metal leads

Cai，Xiangbin1; Wu，Zefei1; Han，Xu1,2; Chen，Yong1,3; Xu，Shuigang1; Lin，Jiangxiazi1; Han，Tianyi1; He，Pingge1; Feng，Xuemeng1; An，Liheng1; Shi，Run1,3; Wang，Jingwei1,3; Ying，Zhehan1; Cai，Yuan1; Hua，Mengyuan4; Liu，Junwei1; Pan，Ding1,2; Cheng，Chun3; Wang，Ning1

2022-12-01

10.1038/s41467-022-29449-4

Nature Communications   影响因子和分区

2041-1723

Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC devices for exploring their unconventional physical properties and realizing potential electronic applications. Here we demonstrate a strategy to achieve nearly barrier-free electrical contacts with few-layer TMDSCs by engineering interfacial bonding distortion. The carrier-injection efficiency of such electrical junction is substantially increased with robust ohmic behaviors from room to cryogenic temperatures. The performance enhancements of TMDSC field-effect transistors are well reflected by the low contact resistance (down to 90 Ωµm in MoS, towards the quantum limit), the high field-effect mobility (up to 358,000 cmVs in WSe), and the prominent transport characteristics at cryogenic temperatures. This method also offers possibilities of the local manipulation of atomic structures and electronic properties for TMDSC device design.

SCI

英语

NI论文

其他

Research Grants Council, University Grants Committee[16303720];Research Grants Council, University Grants Committee[AoE/P-701/20];Research Grants Council, University Grants Committee[C6025-19G];Research Grants Council, University Grants Committee[C7036-17W];

Science & Technology - Other Topics

Multidisciplinary Sciences

WOS:000777408600017

NATURE PORTFOLIO

2-s2.0-85127451108

Scopus

1.Department of Physics and Center for Quantum Materials,The Hong Kong University of Science and Technology,Clear Water Bay,Kowloon,Hong Kong
2.Department of Chemistry,The Hong Kong University of Science and Technology,Clear Water Bay,Kowloon,Hong Kong
3.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
4.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China

Cai，Xiangbin,Wu，Zefei,Han，Xu,et al. Bridging the gap between atomically thin semiconductors and metal leads[J]. Nature Communications,2022,13(1).

Cai，Xiangbin.,Wu，Zefei.,Han，Xu.,Chen，Yong.,Xu，Shuigang.,...&Wang，Ning.(2022).Bridging the gap between atomically thin semiconductors and metal leads.Nature Communications,13(1).

Cai，Xiangbin,et al."Bridging the gap between atomically thin semiconductors and metal leads".Nature Communications 13.1(2022).