中文版 | English
题名

Recent advances in ion‐sensitive field‐effect transistors for biosensing applications

作者
通讯作者Wei,Mao; Yuanjing,Lin; Hao,Yu
共同第一作者Xiaohao,Ma; Ruiheng,Peng
发表日期
2022-02-18
DOI
发表期刊
ISSN
2698-5977
卷号3期号:3
摘要

Over the past decades, considerable development and improvement can be observed in the area of the ion-sensitive field-effect transistor (ISFET) for biosensing applications. The mature semiconductor industry provides a solid foundation for the commercialization of the ISFET-based sensors and extensive research has been conducted to improve the performance of ISFET, with a special research focus on the materials, device structures, and readout topologies. In this review, the basic theories and mechanisms of ISFET are first introduced. Research on ISFET gate materials is reviewed, followed by a summary of typical gate structures and signal readout methods for the ISFET sensing system. After that, a variety of biosensing applications including ions, deoxyribonucleic acid, proteins, and microbes are presented. Finally, the prospects and challenges of the ISFET-based biosensors are discussed.

关键词
相关链接[来源记录]
收录类别
SCI ; EI ; ESCI
语种
英语
学校署名
第一 ; 共同第一 ; 通讯
资助项目
Engineering Research Center of Integrated Circuits for Next-Generation Communications[Y01796303] ; Southern University of Science and Technology Grant["Y01796108","Y01796208","K21799122","K21799109"] ; Shenzhen Science and Technology Program Grant[KQTD20200820113051096] ; National Key R&D Program of the Ministry of Science and Technology Grant[2021YFE0204000] ; National Natural Science Foundation of China (NSFC) Key Program Grant[62034007]
WOS研究方向
Electrochemistry
WOS类目
Electrochemistry
WOS记录号
WOS:001136672700007
出版者
EI入藏号
20234314964153
EI主题词
Ion sensitive field effect transistors ; Semiconductor device manufacture
EI分类号
Semiconductor Devices and Integrated Circuits:714.2
来源库
人工提交
引用统计
被引频次[WOS]:19
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/332759
专题工学院_深港微电子学院
作者单位
1.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China
2.Engineerlng Research Center of Integrated Circults for Next- Generatlon Communlcatlons, Ministry of Education, ern University of Science and Technology, Shenzhen, China, Shenzhen, China
第一作者单位深港微电子学院
通讯作者单位深港微电子学院
第一作者的第一单位深港微电子学院
推荐引用方式
GB/T 7714
Xiaohao,Ma,Ruiheng,Peng,Wei,Mao,等. Recent advances in ion‐sensitive field‐effect transistors for biosensing applications[J]. Electrochemical Science Advances,2022,3(3).
APA
Xiaohao,Ma,Ruiheng,Peng,Wei,Mao,Yuanjing,Lin,&Hao,Yu.(2022).Recent advances in ion‐sensitive field‐effect transistors for biosensing applications.Electrochemical Science Advances,3(3).
MLA
Xiaohao,Ma,et al."Recent advances in ion‐sensitive field‐effect transistors for biosensing applications".Electrochemical Science Advances 3.3(2022).
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文件名: Electrochemical Science Adv - 2022 - Ma - Recent advances in ion‐sensitive field‐effect transistors for biosensing.pdf
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文件名: Electrochemical Science Adv - 2022 - Ma - Recent advances in ion‐sensitive field‐effect transistors for biosensing.pdf
格式: Adobe PDF
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