题名 | Recent advances in ion‐sensitive field‐effect transistors for biosensing applications |
作者 | |
通讯作者 | Wei,Mao; Yuanjing,Lin; Hao,Yu |
共同第一作者 | Xiaohao,Ma; Ruiheng,Peng |
发表日期 | 2022-02-18
|
DOI | |
发表期刊 | |
ISSN | 2698-5977
|
卷号 | 3期号:3 |
摘要 | Over the past decades, considerable development and improvement can be observed in the area of the ion-sensitive field-effect transistor (ISFET) for biosensing applications. The mature semiconductor industry provides a solid foundation for the commercialization of the ISFET-based sensors and extensive research has been conducted to improve the performance of ISFET, with a special research focus on the materials, device structures, and readout topologies. In this review, the basic theories and mechanisms of ISFET are first introduced. Research on ISFET gate materials is reviewed, followed by a summary of typical gate structures and signal readout methods for the ISFET sensing system. After that, a variety of biosensing applications including ions, deoxyribonucleic acid, proteins, and microbes are presented. Finally, the prospects and challenges of the ISFET-based biosensors are discussed. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 第一
; 共同第一
; 通讯
|
资助项目 | Engineering Research Center of Integrated Circuits for Next-Generation Communications[Y01796303]
; Southern University of Science and Technology Grant["Y01796108","Y01796208","K21799122","K21799109"]
; Shenzhen Science and Technology Program Grant[KQTD20200820113051096]
; National Key R&D Program of the Ministry of Science and Technology Grant[2021YFE0204000]
; National Natural Science Foundation of China (NSFC) Key Program Grant[62034007]
|
WOS研究方向 | Electrochemistry
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WOS类目 | Electrochemistry
|
WOS记录号 | WOS:001136672700007
|
出版者 | |
EI入藏号 | 20234314964153
|
EI主题词 | Ion sensitive field effect transistors
; Semiconductor device manufacture
|
EI分类号 | Semiconductor Devices and Integrated Circuits:714.2
|
来源库 | 人工提交
|
引用统计 |
被引频次[WOS]:19
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/332759 |
专题 | 工学院_深港微电子学院 |
作者单位 | 1.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China 2.Engineerlng Research Center of Integrated Circults for Next- Generatlon Communlcatlons, Ministry of Education, ern University of Science and Technology, Shenzhen, China, Shenzhen, China |
第一作者单位 | 深港微电子学院 |
通讯作者单位 | 深港微电子学院 |
第一作者的第一单位 | 深港微电子学院 |
推荐引用方式 GB/T 7714 |
Xiaohao,Ma,Ruiheng,Peng,Wei,Mao,等. Recent advances in ion‐sensitive field‐effect transistors for biosensing applications[J]. Electrochemical Science Advances,2022,3(3).
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APA |
Xiaohao,Ma,Ruiheng,Peng,Wei,Mao,Yuanjing,Lin,&Hao,Yu.(2022).Recent advances in ion‐sensitive field‐effect transistors for biosensing applications.Electrochemical Science Advances,3(3).
|
MLA |
Xiaohao,Ma,et al."Recent advances in ion‐sensitive field‐effect transistors for biosensing applications".Electrochemical Science Advances 3.3(2022).
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