Pressure -Induced Superconductivity in HgTe Single-Crystal Film

Li, Qiang1,2; Zhang, Jian3; Zheng, Qunfei1,2; Guo, Wenyu1; Cao, Jiangming1; Jin, Meiling2; Zhang, Xingyu4; Li, Nana2; Wu, Yanhui1; Ye, Xiang1; Chen, Pingping3; Zhu, Jinlong2,4; Wang, Tao1; Shi, Wangzhou1; Wang, Feifei1; Yang, Wenge2; Qin, Xiaomei1

2022-04-01

10.1002/advs.202200590

ADVANCED SCIENCE   影响因子和分区

2198-3844

HgTe film is widely used for quantum Hall well studies and devices, as it has unique properties, like band gap inversion, carrier-type switch, and topological evolution depending on the film thickness modulation near the so-called critical thickness (63.5 angstrom), while its counterpart bulk materials do not hold these nontrivial properties at ambient pressure. Here, much richer transport properties emerging in bulk HgTe crystal through pressure-tuning are reported. Not only the above-mentioned abnormal properties can be realized in a 400 nm thick bulk HgTe single crystal, but superconductivity also discovered in a series of high-pressure phases. Combining crystal structure, electrical transport, and Hall coefficient measurements, a p-n carrier type switching is observed in the first high-pressure cinnabar phase. Superconductivity emerges after the semiconductor-to-metal transition at 3.9 GPa and persists up to 54 GPa, crossing four high-pressure phases with an increased upper critical field. Density functional theory calculations confirm that a surface-dominated topologic band structure contributes these exotic properties under high pressure. This discovery presents broad and efficient tuning effects by pressure on the lattice structure and electronic modulations compared to the thickness-dependent critical properties in 2D and 3D topologic insulators and semimetals.

high pressure superconductivity topological property transporting

SCI ; EI

英语

通讯

National Natural Science Foundation of China[52172005,"U1930401","U1530402",51527801,12027805,11991060,"U1931205",62175155,12004161] ; National Key R&D Program of China[2018YFA0305703] ; Science and Technology Commission of Shanghai Municipality[19070502800]

Chemistry ; Science & Technology - Other Topics ; Materials Science

Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000786954500001

WILEY

20221712031177

Crystal structure ; Density functional theory ; Energy gap ; Mercury compounds ; Modulation ; Single crystals ; Structural properties ; Tellurium compounds ; Tuning

Structural Design:408 ; Combinatorial Mathematics, Includes Graph Theory, Set Theory:921.4 ; Probability Theory:922.1 ; Atomic and Molecular Physics:931.3 ; Quantum Theory; Quantum Mechanics:931.4 ; Crystalline Solids:933.1 ; Crystal Lattice:933.1.1 ; Materials Science:951

Web of Science

1.Shanghai Normal Univ, Dept Phys, Shanghai 200234, Peoples R China
2.Ctr High Pressure Sci & Technol Adv Res HPSTAR, Shanghai 201203, Peoples R China
3.Chinese Acad Sci, State Key Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China
4.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China

Li, Qiang,Zhang, Jian,Zheng, Qunfei,et al. Pressure -Induced Superconductivity in HgTe Single-Crystal Film[J]. ADVANCED SCIENCE,2022,9.

Li, Qiang.,Zhang, Jian.,Zheng, Qunfei.,Guo, Wenyu.,Cao, Jiangming.,...&Qin, Xiaomei.(2022).Pressure -Induced Superconductivity in HgTe Single-Crystal Film.ADVANCED SCIENCE,9.

Li, Qiang,et al."Pressure -Induced Superconductivity in HgTe Single-Crystal Film".ADVANCED SCIENCE 9(2022).