Marked Efficiency Improvement of FAPb0.7 Sn0.3 Br3 Perovskite Light-Emitting Diodes by Optimization of the Light-Emitting Layer and Hole-Transport Layer

Hu，Lufeng1; Ye，Zhixiang1; Wu，Dan1; Wang，Zhaojin2; Wang，Weigao3; Wang，Kai2; Cui，Xiangqian1; Wang，Ning1; An，Hongyu1; Li，Bobo1; Xiang，Bingxi1; Qiu，Mingxia1

2022-05-01

10.3390/nano12091454

Nanomaterials   影响因子和分区

2079-4991

Highly luminescent FAPb Sn Br nanocrystals with an average photoluminescence (PL) quantum yield of 92% were synthesized by the ligand-assisted reprecipitation method. The 41-nm-thick perovskite film with a smooth surface and strong PL intensity was proven to be a suitable luminescent layer for perovskite light-emitting diodes (PeLEDs). Electrical tests indicate that the double hole-transport layers (HTLs) played an important role in improving the electrical-tooptical conversion efficiency of PeLEDs due to their cascade-like level alignment. The PeLED based on poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,40-(N-(p-butylphenyl))-diphenylamine)] (TFB)/poly(9-vinylcarbazole) (PVK) double HTLs produced a high external quantum efficiency (EQE) of 9%, which was improved by approximately 10.9 and 5.14 times when compared with single HTL PVK or the TFB device, respectively. The enhancement of the hole transmission capacity by TFB/PVK double HTLs was confirmed by the hole-only device and was responsible for the dramatic EQE improvement.

double hole transport structure FAPb0.7 Sn0.3 Br3 film light-emitting layer thickness perovskite light-emitting diode

SCI

英语

其他

Guangdong Basic and Applied Basic Research Foundation["2019A1515110230","2021A1515012055"] ; Ministry of Education Industry-University Cooperation and Collaborative Education Project[202002105037] ; Shenzhen Technology Research Project[JSGG20201102162200002] ; Shenzhen Technology University School-Enterprise Cooperation Project[20211064010033]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000794795800001

MDPI

2-s2.0-85128753670

Scopus

1.College of New Materials and New Energies,Shenzhen Technology University,Shenzhen,518118,China
2.Guangdong University Key Lab for Advanced Quantum Dot Displays and Lighting,Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting,Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China
3.Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen,518060,China

Hu，Lufeng,Ye，Zhixiang,Wu，Dan,et al. Marked Efficiency Improvement of FAPb0.7 Sn0.3 Br3 Perovskite Light-Emitting Diodes by Optimization of the Light-Emitting Layer and Hole-Transport Layer[J]. Nanomaterials,2022,12(9).

Hu，Lufeng.,Ye，Zhixiang.,Wu，Dan.,Wang，Zhaojin.,Wang，Weigao.,...&Qiu，Mingxia.(2022).Marked Efficiency Improvement of FAPb0.7 Sn0.3 Br3 Perovskite Light-Emitting Diodes by Optimization of the Light-Emitting Layer and Hole-Transport Layer.Nanomaterials,12(9).

Hu，Lufeng,et al."Marked Efficiency Improvement of FAPb0.7 Sn0.3 Br3 Perovskite Light-Emitting Diodes by Optimization of the Light-Emitting Layer and Hole-Transport Layer".Nanomaterials 12.9(2022).