Enhanced p-Type Conductivity of NiOxFilms with Divalent Cd Ion Doping for Efficient Inverted Perovskite Solar Cells

Yuan，Xiangbao1,2; Li，Haiyun3; Fan，Jing4; Zhang，Lin5; Ran，Feng1,2; Feng，Menglei1,2; Li，Peiyuan1,2; Kong，Weixiang1,2; Chen，Shijian1,2; Zang，Zhigang3; Wang，Shuangpeng6

2022-04-20

10.1021/acsami.2c01813

ACS Applied Materials & Interfaces   影响因子和分区

1944-8244

1944-8252

The effect of substitutional metal dopants in NiOx on the structural and electronic structures is of great interest, particularly for increasing the p-type conductivities as a hole transport layer (HTL) applied in perovskite solar cells (PSCs). In this paper, experimental fabrications and density functional theory calculations have been carried out on Cd-doped NiOx films to examine the effect of divalent doping on the electronic and geometric structures of NiOx. The results indicate that divalent Cd dopants reduced the formation energy of the Ni vacancy (VNi) and created more VNi in the films, which enhanced the p-type conductivity of the NiOx films. In addition, Cd doping also deepened the valence band edge, reduced the monomolecular Shockley-Read-Hall (SRH) recombination losses, and promoted hole extraction and transport. Hence, the PSCs with Cd:NiOx HTLs manifest a high efficiency of 20.47%, a high photocurrent density of 23.00 mA cm-2, and a high fill factor of 79.62%, as well as negligible hysteresis and excellent stability. This work illustrates that divalent elements such as Cd, Zn, Co, etc. may be potential dopants to improve the p-type conductivity of the NiOx films for applications in highly efficient and stabilized PSCs.

divalent Cd ions doped NiOx hole transport layer p-type conductivity perovskite solar cells

SCI ; EI

英语

其他

Chongqing Natural Science Foundation[cstc2019jcyj-msxmX0572]

Science & Technology - Other Topics ; Materials Science

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000797959300043

AMER CHEMICAL SOC

20221712011631

Binary alloys ; Density functional theory ; Electronic structure ; Hole mobility ; Perovskite ; Semiconducting films ; Semiconductor doping

Minerals:482.2 ; Solar Cells:702.3 ; Semiconducting Materials:712.1 ; Probability Theory:922.1 ; Atomic and Molecular Physics:931.3 ; Quantum Theory; Quantum Mechanics:931.4

2-s2.0-85128525732

Scopus

1.Chongqing Key Laboratory Of Soft Condense Matter Physics And Smart Materials,College Of Physics,Chongqing University,Chongqing,401331,China
2.Center Of Modern Physics,Institute For Smart City Of Chongqing University In Liyang,Liyang,213300,China
3.Key Laboratory Of Optoelectronic Technology And Systems (Ministry Of Education),Chongqing University,Chongqing,400044,China
4.Center For Computational Science And Engineering,Southern University Of Science And Technology,Shenzhen,518055,China
5.Moe Key Laboratory Of Low-Grade Energy Utilization Technologies And Systems,School Of Energy And Power Engineering,Chongqing University,Chongqing,400044,China
6.Institute Of Applied Physics And Materials Engineering,University Of Macau,Taipa,Avenida da Universidade,999078,Macao

Yuan，Xiangbao,Li，Haiyun,Fan，Jing,et al. Enhanced p-Type Conductivity of NiOxFilms with Divalent Cd Ion Doping for Efficient Inverted Perovskite Solar Cells[J]. ACS Applied Materials & Interfaces,2022,14(15):17434-17443.

Yuan，Xiangbao.,Li，Haiyun.,Fan，Jing.,Zhang，Lin.,Ran，Feng.,...&Wang，Shuangpeng.(2022).Enhanced p-Type Conductivity of NiOxFilms with Divalent Cd Ion Doping for Efficient Inverted Perovskite Solar Cells.ACS Applied Materials & Interfaces,14(15),17434-17443.

Yuan，Xiangbao,et al."Enhanced p-Type Conductivity of NiOxFilms with Divalent Cd Ion Doping for Efficient Inverted Perovskite Solar Cells".ACS Applied Materials & Interfaces 14.15(2022):17434-17443.