中文版 | English
题名

Highly stretchable organic electrochemical transistors with strain-resistant performance

作者
通讯作者Huang, Wei; Zheng, Ding; Xie, Zhaoqian; Yu, Xinge; Marks, Tobin J.; Facchetti, Antonio
发表日期
2022-05-01
DOI
发表期刊
ISSN
1476-1122
EISSN
1476-4660
卷号21页码:564-571
摘要
["Realizing fully stretchable electronic materials is central to advancing new types of mechanically agile and skin-integrable optoelectronic device technologies. Here we demonstrate a materials design concept combining an organic semiconductor film with a honeycomb porous structure with biaxially prestretched platform that enables high-performance organic electrochemical transistors with a charge transport stability over 30-140% tensional strain, limited only by metal contact fatigue. The prestretched honeycomb semiconductor channel of donor-acceptor polymer poly(2,5-bis(2-octyldodecyl)-3,6-di(thiophen-2-yl)-2,5-diketo-pyrrolopyrrole-alt-2,5-bis(3-triethyleneglycoloxy-thiophen-2-yl) exhibits high ion uptake and completely stable electrochemical and mechanical properties over 1,500 redox cycles with 10(4) stretching cycles under 30% strain. Invariant electrocardiogram recording cycles and synapse responses under varying strains, along with mechanical finite element analysis, underscore that the present stretchable organic electrochemical transistor design strategy is suitable for diverse applications requiring stable signal output under deformation with low power dissipation and mechanical robustness.","Highly stretchable organic electrochemical transistors with stable charge transport under severe tensional strains are demonstrated using a honeycomb semiconducting polymer morphology, thereby enabling controllable signal output for diverse stretchable bioelectronic applications."]
相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
重要成果
ESI高被引 ; NI论文
学校署名
其他
资助项目
Air Force Office of Scientific Research (AFOSR)[FA9550-18-1-0320] ; Northwestern University Materials Research Science and Engineering Center (NU-MRSEC)[NSF DMR-1720139] ; Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource[NSF NNCI-1542205] ; MRSEC programme[NSF DMR-1121262] ; US Department of Energy[DE-AC02-06CH11357] ; National Natural Science Foundation of China[61804073,12072057,"U1830207"] ; Dalian Outstanding Young Talents in Science and Technology[2021RJ06] ; LiaoNing Revitalization Talents Program[XLYC2007196] ; Fundamental Research Funds for the Central Universities[DUT20RC(3)032] ; City University of Hong Kong[9610423,9667199] ; Research Grants Council of the Hong Kong Special Administrative Region[21210820] ; Guangdong Provincial Key Laboratory Program from the Department of Science and Technology of Guangdong Province[2021B1212040001]
WOS研究方向
Chemistry ; Materials Science ; Physics
WOS类目
Chemistry, Physical ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号
WOS:000789755400002
出版者
EI入藏号
20221912070823
EI主题词
Honeycomb structures ; Optoelectronic devices ; Transistors
EI分类号
Structural Members and Shapes:408.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Optical Devices and Systems:741.3 ; Materials Science:951
ESI学科分类
MATERIALS SCIENCE
来源库
Web of Science
引用统计
被引频次[WOS]:137
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/334330
专题工学院_材料科学与工程系
作者单位
1.Yunnan Univ, Dept Chem Sci & Technol, Kunming, Yunnan, Peoples R China
2.Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
3.Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
4.Southern Univ Sci & Technol SUSTech, Dept Mat Sci & Engn, Shenzhen, Peoples R China
5.Southern Univ Sci & Technol SUSTech, Shenzhen Key Lab Printed Organ Elect, Shenzhen, Peoples R China
6.Univ Elect Sci & Technol China UESTC, Sch Automat Engn, Chengdu, Peoples R China
7.Dalian Univ Technol, Dept Engn Mech, State Key Lab Struct Anal Ind Equipment, Dalian, Peoples R China
8.City Univ Hong Kong, Dept Biomed Engn, Hong Kong, Peoples R China
9.Dalian Univ Technol, Ningbo Inst, Ningbo, Peoples R China
10.Univ Elect Sci & Technol China UESTC, Sch Optoelect Sci & Engn, State Key Lab Elect Thin Films & Integrated Devic, Chengdu, Peoples R China
11.Argonne Natl Lab, X Ray Sci Div, 9700 S Cass Ave, Argonne, IL 60439 USA
12.Flexterra Inc, Skokie, IL 60077 USA
13.Linkoping Univ, Dept Sci & Technol, Lab Organ Elect, Norrkoping, Sweden
第一作者单位材料科学与工程系;  南方科技大学
推荐引用方式
GB/T 7714
Chen, Jianhua,Huang, Wei,Zheng, Ding,et al. Highly stretchable organic electrochemical transistors with strain-resistant performance[J]. NATURE MATERIALS,2022,21:564-571.
APA
Chen, Jianhua.,Huang, Wei.,Zheng, Ding.,Xie, Zhaoqian.,Zhuang, Xinming.,...&Facchetti, Antonio.(2022).Highly stretchable organic electrochemical transistors with strain-resistant performance.NATURE MATERIALS,21,564-571.
MLA
Chen, Jianhua,et al."Highly stretchable organic electrochemical transistors with strain-resistant performance".NATURE MATERIALS 21(2022):564-571.
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