题名 | Highly stretchable organic electrochemical transistors with strain-resistant performance |
作者 | Chen, Jianhua1,2,3,4,5 ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
通讯作者 | Huang, Wei; Zheng, Ding; Xie, Zhaoqian; Yu, Xinge; Marks, Tobin J.; Facchetti, Antonio |
发表日期 | 2022-05-01
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DOI | |
发表期刊 | |
ISSN | 1476-1122
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EISSN | 1476-4660
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卷号 | 21页码:564-571 |
摘要 | ["Realizing fully stretchable electronic materials is central to advancing new types of mechanically agile and skin-integrable optoelectronic device technologies. Here we demonstrate a materials design concept combining an organic semiconductor film with a honeycomb porous structure with biaxially prestretched platform that enables high-performance organic electrochemical transistors with a charge transport stability over 30-140% tensional strain, limited only by metal contact fatigue. The prestretched honeycomb semiconductor channel of donor-acceptor polymer poly(2,5-bis(2-octyldodecyl)-3,6-di(thiophen-2-yl)-2,5-diketo-pyrrolopyrrole-alt-2,5-bis(3-triethyleneglycoloxy-thiophen-2-yl) exhibits high ion uptake and completely stable electrochemical and mechanical properties over 1,500 redox cycles with 10(4) stretching cycles under 30% strain. Invariant electrocardiogram recording cycles and synapse responses under varying strains, along with mechanical finite element analysis, underscore that the present stretchable organic electrochemical transistor design strategy is suitable for diverse applications requiring stable signal output under deformation with low power dissipation and mechanical robustness.","Highly stretchable organic electrochemical transistors with stable charge transport under severe tensional strains are demonstrated using a honeycomb semiconducting polymer morphology, thereby enabling controllable signal output for diverse stretchable bioelectronic applications."] |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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重要成果 | ESI高被引
; NI论文
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学校署名 | 其他
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资助项目 | Air Force Office of Scientific Research (AFOSR)[FA9550-18-1-0320]
; Northwestern University Materials Research Science and Engineering Center (NU-MRSEC)[NSF DMR-1720139]
; Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource[NSF NNCI-1542205]
; MRSEC programme[NSF DMR-1121262]
; US Department of Energy[DE-AC02-06CH11357]
; National Natural Science Foundation of China[61804073,12072057,"U1830207"]
; Dalian Outstanding Young Talents in Science and Technology[2021RJ06]
; LiaoNing Revitalization Talents Program[XLYC2007196]
; Fundamental Research Funds for the Central Universities[DUT20RC(3)032]
; City University of Hong Kong[9610423,9667199]
; Research Grants Council of the Hong Kong Special Administrative Region[21210820]
; Guangdong Provincial Key Laboratory Program from the Department of Science and Technology of Guangdong Province[2021B1212040001]
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WOS研究方向 | Chemistry
; Materials Science
; Physics
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WOS类目 | Chemistry, Physical
; Materials Science, Multidisciplinary
; Physics, Applied
; Physics, Condensed Matter
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WOS记录号 | WOS:000789755400002
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出版者 | |
EI入藏号 | 20221912070823
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EI主题词 | Honeycomb structures
; Optoelectronic devices
; Transistors
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EI分类号 | Structural Members and Shapes:408.2
; Semiconductor Devices and Integrated Circuits:714.2
; Optical Devices and Systems:741.3
; Materials Science:951
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ESI学科分类 | MATERIALS SCIENCE
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来源库 | Web of Science
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引用统计 |
被引频次[WOS]:137
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/334330 |
专题 | 工学院_材料科学与工程系 |
作者单位 | 1.Yunnan Univ, Dept Chem Sci & Technol, Kunming, Yunnan, Peoples R China 2.Northwestern Univ, Dept Chem, Evanston, IL 60208 USA 3.Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA 4.Southern Univ Sci & Technol SUSTech, Dept Mat Sci & Engn, Shenzhen, Peoples R China 5.Southern Univ Sci & Technol SUSTech, Shenzhen Key Lab Printed Organ Elect, Shenzhen, Peoples R China 6.Univ Elect Sci & Technol China UESTC, Sch Automat Engn, Chengdu, Peoples R China 7.Dalian Univ Technol, Dept Engn Mech, State Key Lab Struct Anal Ind Equipment, Dalian, Peoples R China 8.City Univ Hong Kong, Dept Biomed Engn, Hong Kong, Peoples R China 9.Dalian Univ Technol, Ningbo Inst, Ningbo, Peoples R China 10.Univ Elect Sci & Technol China UESTC, Sch Optoelect Sci & Engn, State Key Lab Elect Thin Films & Integrated Devic, Chengdu, Peoples R China 11.Argonne Natl Lab, X Ray Sci Div, 9700 S Cass Ave, Argonne, IL 60439 USA 12.Flexterra Inc, Skokie, IL 60077 USA 13.Linkoping Univ, Dept Sci & Technol, Lab Organ Elect, Norrkoping, Sweden |
第一作者单位 | 材料科学与工程系; 南方科技大学 |
推荐引用方式 GB/T 7714 |
Chen, Jianhua,Huang, Wei,Zheng, Ding,et al. Highly stretchable organic electrochemical transistors with strain-resistant performance[J]. NATURE MATERIALS,2022,21:564-571.
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APA |
Chen, Jianhua.,Huang, Wei.,Zheng, Ding.,Xie, Zhaoqian.,Zhuang, Xinming.,...&Facchetti, Antonio.(2022).Highly stretchable organic electrochemical transistors with strain-resistant performance.NATURE MATERIALS,21,564-571.
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MLA |
Chen, Jianhua,et al."Highly stretchable organic electrochemical transistors with strain-resistant performance".NATURE MATERIALS 21(2022):564-571.
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条目包含的文件 | 条目无相关文件。 |
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