High-Voltage and High-Current IGBT Press-pack Module for Power Grid

Tan，Chunjian1,2; Wang，Shaogang1,2; Liu，Xu1,2; Jiang，Jing3; Zhang，Guoqi2; Ye，Huaiyu1,4

10.1109/EuroSimE54907.2022.9758878

2022

978-1-6654-5837-5

2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2022

1-4

25-27 April 2022

St Julian, Malta

On the basis of the development and application requirements of flexible DC transmission techniques, a 1 kA/10 kV half-bridge IGBT press-pack module is studied. The module is composed of three subunits in series, and each subunit consists of IGBT chips in parallel. In order to solve the problem of chips failure caused by non-uniform rigid-contacting pressure in the press-pack modules, the elastic-contacting structure is designed to ensure excellent electrical connection between chips and contact terminal. During the operating conditions, the heat generated by IGBT chips can induce the increasing of internal temperature of the module, affecting the reliability of the module. A cooling structure is introduced between the subunits to solve the heat dissipation problem of the module. In addition, the thermal analysis of subunit and the cooling structure is performed by using the finite element simulation, and the chip layout and water-cooling scheme are optimized. The testing of electrical parameters of the IGBT module is also conducted.

Insulated gate bipolar transistors Heating systems Cooling Layout Voltage Power grids Thermal analysis

第一 ; 通讯

英语

EI

20221912080345

Cooling ; Electric connectors ; Electric power transmission networks ; HVDC power transmission ; Presses (machine tools) ; Thermoanalysis

Machine Tools, General:603.1 ; Heat Transfer:641.2 ; Electric Components:704.1 ; Electric Power Transmission:706.1.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemistry:801

2-s2.0-85129470376

Scopus

1.Southern University of Science and Technology,School of Microelectronics,Shenzhen,518055,China
2.Delft University of Technology,Fac EEMCS,Delft,2628CD,Netherlands
3.Fudan University,Academy for Engineering Technology,Shanghai,200433,China
4.Key Laboratory of Optoelectronic Technology Systems,Education Ministry of China,Chongqing University and College of Optoelectronic Engineering,Chongqing University,Chongqing,400044,China

Tan，Chunjian,Wang，Shaogang,Liu，Xu,et al. High-Voltage and High-Current IGBT Press-pack Module for Power Grid[C],2022:1-4.