A 112-Gb/s PAM-4 linear optical receiver in 130-nm SiGe BiCMOS

Li，Dan1; Gao，Shengwei1; Shi，Yongjun1; Gui，Xiaoyan1; Qi，Nan2; Li，Zhiyong2; Pan，Quan3; Chiang，Patrick4; Geng，Li1

2020

0271-4310

Proceedings - IEEE International Symposium on Circuits and Systems

2020-October

In this paper, we present a linear optical receiver f or 112-G b/s PAM-4 optical link. We propose a transimpedance f rontend that optimizes thermal noise, power supply noise rejection, linearity and bandwidth altogether. The pseudo-dif f erential structure is employed to achieve both low thermal noise and good power supply noise rejection. A transimpedance amplif ier (TIA) gain control technique is proposed to improve linearity at both topology and transistor level while maintaining stability. A n NIC-CTLE combo extends bandwidth with optimized f requency response. Designed in a 130nm SiG e B iCMOS process, the receiver realizes 37 G Hz total bandwidth and input-ref erred noise of 19.8 pA/√Hz. The transimpedance gain can vary f rom 70 dB Ω to 50 dB Ω, which enables maximum input overload current of 1.8 mApp with < 5% THD at dif f erential output swing of 600 mVpp. The receiver consumes 77mA f rom 3.3V supply.

112 Gb/s 130 nm SiGe BiCMOS Linear optical receiver Low noise PAM-4 Transimpedance amplifier

其他

英语

EI

20212810618830

Bandwidth ; BiCMOS technology ; Bismuth alloys ; Energy gap ; Si-Ge alloys ; Thermal noise

Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconductor Devices and Integrated Circuits:714.2 ; Information Theory and Signal Processing:716.1

2-s2.0-85109297099

Scopus

1.School of Electronic and Information Engineering,Xi'an Jiaotong University,Xi'an,710049,China
2.Chinese Academy of Science,Beijing,China
3.Southern University of Science and Technology,Shenzhen,China
4.Fudan University,Shanghai,China

Li，Dan,Gao，Shengwei,Shi，Yongjun,et al. A 112-Gb/s PAM-4 linear optical receiver in 130-nm SiGe BiCMOS[C],2020.