题名 | High Quantum Yield Blue InP/ZnS/ZnS Quantum Dots Based on Bromine Passivation for Efficient Blue Light-Emitting Diodes |
作者 | |
通讯作者 | Sun, Xiao Wei |
发表日期 | 2022-05-01
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DOI | |
发表期刊 | |
ISSN | 2195-1071
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卷号 | 10期号:15页码:2200685 |
摘要 | Red and green InP quantum dots (QDs) already have been demonstrated with excellent luminescence performance closing the gap with CdSe-based QDs. However, the performance of blue InP QDs still lags behind that of red and green QDs. For blue InP QDs synthesized by aminophosphine and zinc iodide, the inherent I- possesses weak passivation ability. By introducing Br- with a smaller ion radius and larger binding energy, the quantum yield of blue InP QDs is increased from 54% to 93%, which is the highest value reported so far. Meanwhile, the long-chain 1-dodecanethiol is replaced by the short-chain 1-octanethiol through ligand exchange to increase the carrier injection efficiency. The blue quantum dot light-emitting diodes (QLEDs) made of these QDs showed an external quantum efficiency of 2.6%, which is notably the highest blue InP QLED reported so far. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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学校署名 | 通讯
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资助项目 | National Natural Science Foundation of China[61674074,61875082,61405089,62005115]
; Key-Area Research and Development Program of Guang Dong Province[
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WOS研究方向 | Materials Science
; Optics
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WOS类目 | Materials Science, Multidisciplinary
; Optics
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WOS记录号 | WOS:000799030400001
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出版者 | |
EI入藏号 | 20222112151243
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EI主题词 | Binding Energy
; Bromine
; Cadmium Compounds
; II-VI Semiconductors
; III-V Semiconductors
; Indium Phosphide
; Light
; Organic Light Emitting Diodes (OLED)
; Passivation
; Quantum Efficiency
; Quantum Yield
; Semiconducting Indium Phosphide
; Semiconductor Quantum Dots
; X Ray Photoelectron Spectroscopy
; Zinc Compounds
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EI分类号 | Protection Methods:539.2.1
; Semiconducting Materials:712.1
; Compound Semiconducting Materials:712.1.2
; Semiconductor Devices And Integrated Circuits:714.2
; Light/Optics:741.1
; Nanotechnology:761
; Physical Chemistry:801.4
; Chemical Reactions:802.2
; Inorganic Compounds:804.2
; Quantum Theory
; Quantum Mechanics:931.4
; Crystalline Solids:933.1
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来源库 | Web of Science
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引用统计 |
被引频次[WOS]:41
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/335168 |
专题 | 工学院_电子与电气工程系 |
作者单位 | 1.Minist Educ, Key Lab Energy Convers & Storage Technol, Shenzhen 518055, Peoples R China 2.Southern Univ Sci & Technol, Guangdong Hong Kong Macao Joint Lab Photon Therma, Shenzhen Key Lab Adv Quantum Dot Displays & Light, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China 3.Southern Univ Sci & Technol, SUSTech Huawei Joint Lab Photon Ind, Shenzhen 518055, Peoples R China 4.Singapore Univ Technol & Design, Fluorescence Res Grp, 8 Somapah Rd, Singapore 487372, Singapore 5.Shenzhen Planck Innovat Technol Ltd, Shenzhen 518116, Peoples R China |
第一作者单位 | 电子与电气工程系 |
通讯作者单位 | 电子与电气工程系; 南方科技大学 |
推荐引用方式 GB/T 7714 |
Zhang, Wenda,Tan, Yangzhi,Duan, Xijian,et al. High Quantum Yield Blue InP/ZnS/ZnS Quantum Dots Based on Bromine Passivation for Efficient Blue Light-Emitting Diodes[J]. Advanced Optical Materials,2022,10(15):2200685.
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APA |
Zhang, Wenda.,Tan, Yangzhi.,Duan, Xijian.,Zhao, Fangqing.,Liu, Haochen.,...&Sun, Xiao Wei.(2022).High Quantum Yield Blue InP/ZnS/ZnS Quantum Dots Based on Bromine Passivation for Efficient Blue Light-Emitting Diodes.Advanced Optical Materials,10(15),2200685.
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MLA |
Zhang, Wenda,et al."High Quantum Yield Blue InP/ZnS/ZnS Quantum Dots Based on Bromine Passivation for Efficient Blue Light-Emitting Diodes".Advanced Optical Materials 10.15(2022):2200685.
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