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题名

High Quantum Yield Blue InP/ZnS/ZnS Quantum Dots Based on Bromine Passivation for Efficient Blue Light-Emitting Diodes

作者
通讯作者Sun, Xiao Wei
发表日期
2022-05-01
DOI
发表期刊
ISSN
2195-1071
卷号10期号:15页码:2200685
摘要

Red and green InP quantum dots (QDs) already have been demonstrated with excellent luminescence performance closing the gap with CdSe-based QDs. However, the performance of blue InP QDs still lags behind that of red and green QDs. For blue InP QDs synthesized by aminophosphine and zinc iodide, the inherent I- possesses weak passivation ability. By introducing Br- with a smaller ion radius and larger binding energy, the quantum yield of blue InP QDs is increased from 54% to 93%, which is the highest value reported so far. Meanwhile, the long-chain 1-dodecanethiol is replaced by the short-chain 1-octanethiol through ligand exchange to increase the carrier injection efficiency. The blue quantum dot light-emitting diodes (QLEDs) made of these QDs showed an external quantum efficiency of 2.6%, which is notably the highest blue InP QLED reported so far.

关键词
相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
学校署名
通讯
资助项目
National Natural Science Foundation of China[61674074,61875082,61405089,62005115] ; Key-Area Research and Development Program of Guang Dong Province[
WOS研究方向
Materials Science ; Optics
WOS类目
Materials Science, Multidisciplinary ; Optics
WOS记录号
WOS:000799030400001
出版者
EI入藏号
20222112151243
EI主题词
Binding Energy ; Bromine ; Cadmium Compounds ; II-VI Semiconductors ; III-V Semiconductors ; Indium Phosphide ; Light ; Organic Light Emitting Diodes (OLED) ; Passivation ; Quantum Efficiency ; Quantum Yield ; Semiconducting Indium Phosphide ; Semiconductor Quantum Dots ; X Ray Photoelectron Spectroscopy ; Zinc Compounds
EI分类号
Protection Methods:539.2.1 ; Semiconducting Materials:712.1 ; Compound Semiconducting Materials:712.1.2 ; Semiconductor Devices And Integrated Circuits:714.2 ; Light/Optics:741.1 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Chemical Reactions:802.2 ; Inorganic Compounds:804.2 ; Quantum Theory ; Quantum Mechanics:931.4 ; Crystalline Solids:933.1
来源库
Web of Science
引用统计
被引频次[WOS]:41
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/335168
专题工学院_电子与电气工程系
作者单位
1.Minist Educ, Key Lab Energy Convers & Storage Technol, Shenzhen 518055, Peoples R China
2.Southern Univ Sci & Technol, Guangdong Hong Kong Macao Joint Lab Photon Therma, Shenzhen Key Lab Adv Quantum Dot Displays & Light, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
3.Southern Univ Sci & Technol, SUSTech Huawei Joint Lab Photon Ind, Shenzhen 518055, Peoples R China
4.Singapore Univ Technol & Design, Fluorescence Res Grp, 8 Somapah Rd, Singapore 487372, Singapore
5.Shenzhen Planck Innovat Technol Ltd, Shenzhen 518116, Peoples R China
第一作者单位电子与电气工程系
通讯作者单位电子与电气工程系;  南方科技大学
推荐引用方式
GB/T 7714
Zhang, Wenda,Tan, Yangzhi,Duan, Xijian,et al. High Quantum Yield Blue InP/ZnS/ZnS Quantum Dots Based on Bromine Passivation for Efficient Blue Light-Emitting Diodes[J]. Advanced Optical Materials,2022,10(15):2200685.
APA
Zhang, Wenda.,Tan, Yangzhi.,Duan, Xijian.,Zhao, Fangqing.,Liu, Haochen.,...&Sun, Xiao Wei.(2022).High Quantum Yield Blue InP/ZnS/ZnS Quantum Dots Based on Bromine Passivation for Efficient Blue Light-Emitting Diodes.Advanced Optical Materials,10(15),2200685.
MLA
Zhang, Wenda,et al."High Quantum Yield Blue InP/ZnS/ZnS Quantum Dots Based on Bromine Passivation for Efficient Blue Light-Emitting Diodes".Advanced Optical Materials 10.15(2022):2200685.
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