Analysis of size dependence and the behavior under ultrahigh current density injection condition of GaN-based Micro-LEDs with pixel size down to 3 mu m

Liu, Yibo1; Feng, Feng1; Zhang, Ke1,2; Jiang, Fulong2; Chan, Ka-Wah1,3; Kwok, Hoi-Sing1; Liu, Zhaojun2,3

2022-08-04

10.1088/1361-6463/ac6cb4

JOURNAL OF PHYSICS D-APPLIED PHYSICS   影响因子和分区

0022-3727

1361-6463

In this paper, the GaN-based green micro light-emitting diodes (Micro-LEDs) with various sizes (from 3 to 100 mu m) were fabricated and electro-optically characterized. Atom layer deposition (ALD) passivation and potassium hydroxide (KOH) treatment were applied to eliminate the sidewall damage. The size dependence of Micro-LED was systematically analyzed with current-versus-voltage and current density-versus-voltage relationship. According to the favorable ideality factor results (<1.5), the optimized sidewall treatment was achieved when the device size shrank down to mu m. In addition, the external quantum efficiency (EQE) droop phenomenon, luminance and output power density characteristics were depicted up to the highest current density injection condition to date (120 kA cm(-2)), and 6 mu m device exhibited an improved EQE performance with the peak EQE value of 16.59% at 20 A cm(-2) and over 600k and 6M cd cm(-2) at 1 and 10 A cm(-2), indicating a greater brightness quality for over 3000 PPI multiple display application. Lastly, the blue shift of 6 mu m device with elevating current density was observed in electroluminescence spectra and converted to CIE 1931 color space. The whole shifting track and color variation from 1 A cm(-2) to 120 kA cm(-2) were demonstrated by color coordinates.

Micro-LED size dependence high current density injection

SCI ; EI

英语

通讯

Fundamental and Applied Fundamental Research Fund of Guangdong Province[2021B1515130001] ; Shenzhen Science and Technology Program[KQTD20170810110313773] ; High-level University Fund[G02236005]

Physics

Physics, Applied

WOS:000797686800001

IOP Publishing Ltd

20222212171994

Atomic layer deposition ; Electroluminescence ; Gallium nitride ; III-V semiconductors ; Light emitting diodes ; Luminance ; Potassium hydroxide ; Red Shift

Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light, Optics and Optical Devices:741 ; Light/Optics:741.1 ; Inorganic Compounds:804.2 ; Coating Techniques:813.1 ; Crystal Growth:933.1.2

PHYSICS

Web of Science

1.Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China
2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
3.Shenzhen Sitan Technol Co Ltd, Shenzhen, Peoples R China

Liu, Yibo,Feng, Feng,Zhang, Ke,et al. Analysis of size dependence and the behavior under ultrahigh current density injection condition of GaN-based Micro-LEDs with pixel size down to 3 mu m[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2022,55(31).

Liu, Yibo.,Feng, Feng.,Zhang, Ke.,Jiang, Fulong.,Chan, Ka-Wah.,...&Liu, Zhaojun.(2022).Analysis of size dependence and the behavior under ultrahigh current density injection condition of GaN-based Micro-LEDs with pixel size down to 3 mu m.JOURNAL OF PHYSICS D-APPLIED PHYSICS,55(31).

Liu, Yibo,et al."Analysis of size dependence and the behavior under ultrahigh current density injection condition of GaN-based Micro-LEDs with pixel size down to 3 mu m".JOURNAL OF PHYSICS D-APPLIED PHYSICS 55.31(2022).