Lithium incorporation enhanced resistive switching behaviors in lithium lanthanum titanium oxide-based heterostructure

Deng，Yibo1; Xu，Xiaoguang1; Zhang，Lu2; Du，Fei2; Liu，Qi3; Chen，Jikun1; Meng，Kangkang1; Wu，Yong1; Yang，Ming4; Jiang，Yong1

2022-11-20

10.1016/j.jmst.2022.04.029

JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY   影响因子和分区

1005-0302

1941-1162

Resistive switching devices with a high self-rectifying ratio are important for achieving the crossbar memristor array that overcomes the sneak current issue. Herein, we demonstrate a single amorphous lithium lanthanum titanium oxide (LLTO) layer based Pt/LLTO/Pt device possessing a self-rectifying ratio higher than 1 × 10 that is comparable to the reported devices with complicated multi-layer stacking structures. Moreover, the device shows forming-free and highly uniform bipolar resistive switching (BRS) characteristic that facilitates the potential applications. The trap-controlled and trap-free space charge limited conductions are demonstrated to dominate the high and low resistance states of the device, respectively. The fast migration of lithium ions under external voltage accelerates the electron injection across the Pt/LLTO interface and also the space charge accumulation in the LLTO layer, and as a result, the high performance of the Pt/LLTO/Pt device was achieved. As demonstrated Pt/LLTO/Pt device sheds a light on the potential applications of the lithium ionic conductors in self-rectifying resistive switching devices.

Fast ionic conductor Lithium lanthanum titanium oxide Resistive switching Self-rectifying

SCI ; EI

英语

其他

National Key Research and Development Program of China[2019YFB2005801];National Natural Science Foundation of China[51731003];National Natural Science Foundation of China[51927802];National Natural Science Foundation of China[51971023];National Natural Science Foundation of China[51971024];National Natural Science Foundation of China[51971027];National Natural Science Foundation of China[52061135205];

Materials Science ; Metallurgy & Metallurgical Engineering

Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering

WOS:000810942400001

JOURNAL MATER SCI TECHNOL

20222112157204

Electric space charge ; Lanthanum compounds ; Lithium compounds ; Switching ; Titanium oxides

Electricity: Basic Concepts and Phenomena:701.1 ; Inorganic Compounds:804.2

MATERIALS SCIENCE

2-s2.0-85130565941

Scopus

1.School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing,100083,China
2.Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education),State Key Laboratory of Superhard Materials,College of Physics,Jilin University,Changchun,130012,China
3.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
4.Department of Applied Physics,The Hong Kong Polytechnic University,Hong Kong SAR,China

Deng，Yibo,Xu，Xiaoguang,Zhang，Lu,et al. Lithium incorporation enhanced resistive switching behaviors in lithium lanthanum titanium oxide-based heterostructure[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2022,128:142-147.

Deng，Yibo.,Xu，Xiaoguang.,Zhang，Lu.,Du，Fei.,Liu，Qi.,...&Jiang，Yong.(2022).Lithium incorporation enhanced resistive switching behaviors in lithium lanthanum titanium oxide-based heterostructure.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,128,142-147.

Deng，Yibo,et al."Lithium incorporation enhanced resistive switching behaviors in lithium lanthanum titanium oxide-based heterostructure".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 128(2022):142-147.