Exploring epitaxial growth of ZnTe thin films on Si substrates

Zhu，Xiaolong1; Wu，Jianqiang1; Li，Wei1; Liu，Cai2,3; Zhang，Jingquan1; Hu，Songbai4

2022-08-01

10.1016/j.vacuum.2022.111163

VACUUM   影响因子和分区

0042-207X

Epitaxial growth of ZnTe on Si occurred via matching of eight ZnTe (111) planes with nine Si (111) planes. However, the stacking faults existed in the ZnTe/Si system due to the release of strain energy in initial growth. To further improve ZnTe epilayer quality, different architectures containing ZnTe nucleation layer, or ZnSe buffer layer were grown on Si substrates. The fewer defects can be found across the interfaces for ZnTe/ZnSe with 12/13 or 13/14 matching and ZnSe/Si with 21/22 or 21/23 matching of major planes. Only {111}-oriented domain formed in the ZnTe epilayer for the large-lattice-mismatched samples. The improved ZnTe (111) epitaxial thin films with single domain exhibit the narrowest FWHM of ∼180 arc sec with a dislocation density of 5.14 × 10 cm . Extra half-planar arrays formed at the interfaces of ZnTe/ZnSe, ZnSe/Si were clearly visible through inverse fast Fourier transformation images. Moreover, the fully relaxed ZnTe epilayer with the most balanced residual stress was obtained in the X and Y directions.

Domain matching epitaxy Pole figure Strain and stress ZnTe

EI

英语

通讯

20222112143734

Buffer layers ; Epilayers ; Epitaxial growth ; Selenium compounds ; Silicon ; Strain energy ; Tellurium compounds ; Thin films

Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconducting Materials:712.1 ; Chemical Operations:802.3 ; Mechanics:931.1 ; Crystalline Solids:933.1 ; Crystal Growth:933.1.2

MATERIALS SCIENCE

2-s2.0-85130324080

Scopus

1.College of Materials Science and Engineering,Sichuan University,Chengdu,610064,China
2.Shenzhen Institute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
3.International Quantum Academy,Shenzhen,518048,China
4.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China

Zhu，Xiaolong,Wu，Jianqiang,Li，Wei,et al. Exploring epitaxial growth of ZnTe thin films on Si substrates[J]. VACUUM,2022,202.

Zhu，Xiaolong,Wu，Jianqiang,Li，Wei,Liu，Cai,Zhang，Jingquan,&Hu，Songbai.(2022).Exploring epitaxial growth of ZnTe thin films on Si substrates.VACUUM,202.

Zhu，Xiaolong,et al."Exploring epitaxial growth of ZnTe thin films on Si substrates".VACUUM 202(2022).