Interlayer Coupling and Pressure Engineering in Bilayer MoS2

Qiao，Wei1,2; Sun，Hao1,2; Fan，Xiaoyue1,2; Jin，Meiling3; Liu，Haiyang1,2; Tang，Tianhong1,2; Xiong，Lei1,2; Niu，Binghui1,2; Li，Xiang1,2; Wang，Gang1,2

2022-05-01

10.3390/cryst12050693

Crystals   影响因子和分区

2073-4352

Controlling the interlayer coupling by tuning lattice parameters through pressure engineering is an important route for tailoring the optoelectronic properties of two-dimensional materials. In this work, we report a pressure-dependent study on the exciton transitions of bilayer MoS exfoliated on a diamond anvil surface. The applied hydrostatic pressure changes from ambient pressure up to 11.05 GPa using a diamond anvil cell device. Raman, photoluminescence, and reflectivity spectra at room temperature are analyzed to characterize the interlayer coupling of this bilayer system. With the increase of pressure, the indirect exciton emission disappears completely at about 5 GPa. Importantly, we clearly observed the interlayer exciton from the reflectivity spectra, which becomes invisible at a low pressure around 1.26 GPa. This indicates that the interlayer exciton is very sensitive to the hydrostatic pressure due to the oscillator strength transfer from the direct transition to the indirect one.

2D materials bilayer MoS2 interlayer coupling pressure engineering

SCI

英语

其他

National Natural Science Foundation of China[11904019];National Natural Science Foundation of China[11904020];National Natural Science Foundation of China[12004161];National Natural Science Foundation of China[12074033];National Natural Science Foundation of China[12174025];Natural Science Foundation of Beijing Municipality[Z190006];

Crystallography ; Materials Science

Crystallography ; Materials Science, Multidisciplinary

WOS:000801779700001

MDPI

2-s2.0-85130380358

Scopus

1.Centre for Quantum Physics,Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE),School of Physics,Beijing Institute of Technology,Beijing,100081,China
2.Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems,Beijing Institute of Technology,Beijing,100081,China
3.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China

Qiao，Wei,Sun，Hao,Fan，Xiaoyue,et al. Interlayer Coupling and Pressure Engineering in Bilayer MoS2[J]. Crystals,2022,12(5).

Qiao，Wei.,Sun，Hao.,Fan，Xiaoyue.,Jin，Meiling.,Liu，Haiyang.,...&Wang，Gang.(2022).Interlayer Coupling and Pressure Engineering in Bilayer MoS2.Crystals,12(5).

Qiao，Wei,et al."Interlayer Coupling and Pressure Engineering in Bilayer MoS2".Crystals 12.5(2022).