| 题名 | Performance Optimization of Atomic Layer Deposited HfOx Memristor by Annealing With Back-End-of-Line Compatibility |
| 作者 | |
| 通讯作者 | Li，Jiangyu |
| 发表日期 | 2022-07
|
| DOI | |
| 发表期刊 | |
| ISSN | 1558-0563
|
| 卷号 | 43期号:7页码:1141-1144 |
| 关键词 | |
| 相关链接 | [IEEE记录] |
| 收录类别 | |
| 语种 | 英语
|
| 学校署名 | 通讯
|
| EI入藏号 | 20222212175727
|
| EI主题词 | Atomic Layer Deposition
; Budget Control
; Hafnium Oxides
; Memristors
; Temperature
|
| EI分类号 | Heat Treatment Processes:537.1
; Thermodynamics:641.1
; Semiconductor Devices And Integrated Circuits:714.2
; Chemical Products Generally:804
; Coating Techniques:813.1
; Crystal Growth:933.1.2
|
| ESI学科分类 | ENGINEERING
|
| 来源库 | IEEE
|
| 全文链接 | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9781407 |
| 引用统计 |
被引频次[WOS]：9
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/335504 |
| 专题 | 南方科技大学 |
| 作者单位 | 1.Xiangtan University, Xiangtan, China 2.Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China 3.CNRS-International NTU-THALES-Research-Alliance (CINTRA), Nanyang Technological University, Singapore 639798, Singapore 4.Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, China |
| 通讯作者单位 | 南方科技大学 |
| 推荐引用方式 GB/T 7714 |
Chen，Hong,Li，Lianzheng,Wang，Jinbin,et al. Performance Optimization of Atomic Layer Deposited HfOx Memristor by Annealing With Back-End-of-Line Compatibility[J]. IEEE Electron Device Letters,2022,43(7):1141-1144.
|
| APA |
Chen，Hong.,Li，Lianzheng.,Wang，Jinbin.,Zhao，Guangchao.,Li，Yida.,...&Huang，Mingqiang.(2022).Performance Optimization of Atomic Layer Deposited HfOx Memristor by Annealing With Back-End-of-Line Compatibility.IEEE Electron Device Letters,43(7),1141-1144.
|
| MLA |
Chen，Hong,et al."Performance Optimization of Atomic Layer Deposited HfOx Memristor by Annealing With Back-End-of-Line Compatibility".IEEE Electron Device Letters 43.7(2022):1141-1144.
|
| 条目包含的文件 | 条目无相关文件。 | |||||
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