中文版 | English
题名

A 19-30ppm/°C Temperature Coefficient Sub-Nanowatt CMOS Voltage Reference with 10-μA Sourcing Capability

作者
DOI
发表日期
2022
ISSN
0886-5930
ISBN
978-1-7281-8280-3
会议录名称
卷号
2022-April
页码
1-2
会议日期
24-27 April 2022
会议地点
Newport Beach, CA, USA
摘要
The Internet of Things (loT) is developing rapidly, and energy harvesting (EH) provides the power source impetus for it. Still the energy collected from EH is generally underfed, which obliges EH powered modules to achieve low power consumption as much as possible. Hence, the growth of low voltage and low quiescent current designs are pushed forward. For applications with sub-10μA under low-supply (200-300mV), such as sensors for monitoring, SRAM [1], designing an additional regulator is overburdened and one solution is the voltage reference (VR) integrated with output buffer. Whereas the added buffer brings extra area and power consumption (e.g., microwatt), the mismatch substantially degrades the temperature coefficient (TC). Therefore, a sub-nanowatt VR with current sourcing capability is of momentous significance. Besides, supposing that the power consumption of the designed VR is in the order of picowatt, and due to the process restraint, the subsequent gates of MOS transistors connected to the VR output have leakage current of picoampere, it will directly cause the VR to be shut down, needless to mention the microampere loading capability. However, the existing CMOS voltage references (CVRs) hardly source current [2]-[6].
关键词
学校署名
第一
语种
英语
相关链接[Scopus记录]
收录类别
EI入藏号
20222212167508
EI主题词
CMOS integrated circuits ; Electric power utilization ; Temperature ; Voltage measurement
EI分类号
Energy Conversion Issues:525.5 ; Thermodynamics:641.1 ; Electric Power Systems:706.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Electric Variables Measurements:942.2
Scopus记录号
2-s2.0-85130714487
来源库
Scopus
全文链接https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9772855
引用统计
被引频次[WOS]:0
成果类型会议论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/335508
专题南方科技大学
作者单位
Southern University of Science and Technology,Shenzhen,China
第一作者单位南方科技大学
第一作者的第一单位南方科技大学
推荐引用方式
GB/T 7714
Qiao,Hongchang,Zhan,Chenchang. A 19-30ppm/°C Temperature Coefficient Sub-Nanowatt CMOS Voltage Reference with 10-μA Sourcing Capability[C],2022:1-2.
条目包含的文件
条目无相关文件。
个性服务
原文链接
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
导出为Excel格式
导出为Csv格式
Altmetrics Score
谷歌学术
谷歌学术中相似的文章
[Qiao,Hongchang]的文章
[Zhan,Chenchang]的文章
百度学术
百度学术中相似的文章
[Qiao,Hongchang]的文章
[Zhan,Chenchang]的文章
必应学术
必应学术中相似的文章
[Qiao,Hongchang]的文章
[Zhan,Chenchang]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
[发表评论/异议/意见]
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。