Experimental observation of pseudogap in a modulation-doped Mott insulator: Sn/Si(111)-(root 3 x 3)R30 degrees

Xiong, Yan-Ling1; Guan, Jia-Qi1; Wang, Rui-Feng1; Song, Can-Li1,2; Ma, Xu-Cun1,2; Xue, Qi-Kun1,2,3,4

2022-06-01

10.1088/1674-1056/ac65f2

Chinese Physics B   影响因子和分区

1674-1056

2058-3834

Unusual quantum phenomena usually emerge upon doping Mott insulators. Using a molecular beam epitaxy system integrated with cryogenic scanning tunneling microscope, we investigate the electronic structure of a modulation-doped Mott insulator Sn/Si(111)-(root 3 x 3)R30 degrees. In underdoped regions, we observe a universal pseudogap opening around the Fermi level, which changes little with the applied magnetic field and the occurrence of Sn vacancies. The pseudogap gets smeared out at elevated temperatures and alters in size with the spatial confinement of the Mott insulating phase. Our findings, along with the previously observed superconductivity at a higher doping level, are highly reminiscent of the electronic phase diagram in the doped copper oxide compounds.

pseudogap (PG) modulation doping Mott insulator scanning tunneling microscope (STM)

SCI ; EI

英语

其他

National Natural Science Foundation of China[62074092,11604366] ; National Key R&D Program of China[2018YFA0305603]

Physics

Physics, Multidisciplinary

WOS:000807771800001

IOP Publishing Ltd

20222612273200

Copper oxides ; Microscopes ; Modulation ; Molecular beam epitaxy ; Mott insulators ; Silicon

Electric Insulating Materials:413.1 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Optical Devices and Systems:741.3 ; Inorganic Compounds:804.2 ; Atomic and Molecular Physics:931.3 ; Crystal Growth:933.1.2

Web of Science

1.Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
2.Frontier Sci Ctr Quantum Informat, Beijing 100084, Peoples R China
3.Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China
4.Southern Univ Sci & Technol, Shenzhen 518055, Peoples R China

Xiong, Yan-Ling,Guan, Jia-Qi,Wang, Rui-Feng,et al. Experimental observation of pseudogap in a modulation-doped Mott insulator: Sn/Si(111)-(root 3 x 3)R30 degrees[J]. Chinese Physics B,2022,31(6).

Xiong, Yan-Ling,Guan, Jia-Qi,Wang, Rui-Feng,Song, Can-Li,Ma, Xu-Cun,&Xue, Qi-Kun.(2022).Experimental observation of pseudogap in a modulation-doped Mott insulator: Sn/Si(111)-(root 3 x 3)R30 degrees.Chinese Physics B,31(6).

Xiong, Yan-Ling,et al."Experimental observation of pseudogap in a modulation-doped Mott insulator: Sn/Si(111)-(root 3 x 3)R30 degrees".Chinese Physics B 31.6(2022).