High Performance NIR OLEDs with Emission Peak Beyond 760 nm and Maximum EQE of 6.39%

Zhang，Hongyang1,2; Chen，Zhao3; Zhu，Longzhi1,2; Wu，Yongquan1,2,4; Xu，Yuqing5; Chen，Shuming6; Wong，Wai Yeung1,2

2022

10.1002/adom.202200111

Advanced Optical Materials   影响因子和分区

2195-1071

2195-1071

Advances in achieving high external quantum efficiency (EQE) of near-infrared (NIR) organic light-emitting diodes (OLEDs) are lagging behind that of the visible-light OLEDs, according to the energy gap law. Herein, two structurally simple NIR-phosphorescent Ir(III) complexes, DTCNIr and PTCNIr, with the cyclometalated ligands functionalized by the 1-phenylisoquinoline-4-carbonitrile moiety and thieno/benzo[b]thiophene moiety are handily accessed within three synthetic steps. The introduction of the cyano unit can significantly lower the lowest unoccupied molecular orbitals whereas incorporating the conjugated group can elevate the highest occupied molecular orbitals of the newly designed Ir(III) complexes. The intramolecular charge transfer (ICT) transitions are enhanced due to the increased donor–acceptor interaction inside the metallophosphor. As a result, the emissions are red-shifted to the NIR region with fast radiative decay. A maximum external quantum efficiency (EQE) of 8.11% with the emission peak at 726 nm for DTCNIr and a maximum EQE of 6.39% with the emission peak at 763 nm for PTCNIr are achieved in the NIR OLEDs by using these Ir(III) materials as the dopant emitters, a champion efficiency in the Ir(III)-based OLEDs with the emission peak exceeding 760 nm.

high external quantum efficiency intramolecular charge transfer transition near-infrared emission organic light-emitting diodes

SCI ; EI

英语

通讯

National Natural Science Foundation of China[21967001,51873176] ; Hong Kong Research Grants Council[PolyU153058/19P] ; CAS-Croucher Funding Scheme for Joint Laboratories, Hong Kong Polytechnic University[1-ZE1C] ; Endowed Professorship in Energy[847S] ; Double-Thousand Talents Plan of Jiangxi Province[jxsq2019201090]

Materials Science ; Optics

Materials Science, Multidisciplinary ; Optics

WOS:000811135200001

WILEY-V C H VERLAG GMBH

20222412233518

Charge transfer ; Energy gap ; Infrared devices ; Iridium compounds ; Light ; Molecular orbitals ; Phosphorescence ; Quantum efficiency ; Red Shift

Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Physical Chemistry:801.4 ; Chemical Reactions:802.2 ; Atomic and Molecular Physics:931.3 ; Quantum Theory; Quantum Mechanics:931.4

2-s2.0-85131839952

Scopus

1.The Hong Kong Polytechnic University Shenzhen Research Institute,Shenzhen,518057,China
2.Department of Applied Biology and Chemical Technology and Research Institute for Smart Energy,The Hong Kong Polytechnic University,Hung Hom,Hong Kong
3.School of Applied Physics and Materials,Wuyi University,Jiangmen,529020,China
4.School of Chemistry and Chemical Engineering,Gannan Normal University,Ganzhou,341000,China
5.College of Physics and Optoelectronic Engineering,Ludong University,Yantai,264025,China
6.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China

Zhang，Hongyang,Chen，Zhao,Zhu，Longzhi,et al. High Performance NIR OLEDs with Emission Peak Beyond 760 nm and Maximum EQE of 6.39%[J]. Advanced Optical Materials,2022,10.

Zhang，Hongyang.,Chen，Zhao.,Zhu，Longzhi.,Wu，Yongquan.,Xu，Yuqing.,...&Wong，Wai Yeung.(2022).High Performance NIR OLEDs with Emission Peak Beyond 760 nm and Maximum EQE of 6.39%.Advanced Optical Materials,10.

Zhang，Hongyang,et al."High Performance NIR OLEDs with Emission Peak Beyond 760 nm and Maximum EQE of 6.39%".Advanced Optical Materials 10(2022).