南方科技大学知识苑(SUSTech KC): Gate-Bias Induced Threshold Voltage (VTH) Instability in P-N Junction/AlGaN/GaN HEMT

题名	Gate-Bias Induced Threshold Voltage (VTH) Instability in P-N Junction/AlGaN/GaN HEMT
作者	Jiang，Zuoheng; Li，Lingling; Wang，Chengcai; Zhao，Junlei; Hua，Mengyuan
通讯作者	Hua，Mengyuan
发表日期	2022-07
DOI	10.1109/TED.2022.3177397
发表期刊	IEEE Transactions on Electron Devices 影响因子和分区
ISSN	1557-9646
卷号	69 期号:7页码:3654-3659
关键词	Hole trapping positive bias temperature instability (PBTI) p-GaN gate p-n junction (PNJ)-high electron-mobility transistor (HEMT) threshold voltage instability
相关链接	[IEEE记录]
收录类别	SCI ; EI
学校署名	第一 ; 通讯
EI入藏号	20222412225049
EI主题词	Bias voltage ; Charge injection ; Computer circuits ; Electric fields ; Electron mobility ; Electrons ; Gallium nitride ; High electron mobility transistors ; III-V semiconductors ; Logic gates ; Stability ; Threshold voltage
EI分类号	Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Electronic Circuits:713 ; Semiconductor Devices and Integrated Circuits:714.2 ; Logic Elements:721.2 ; Computer Circuits:721.3 ; Temperature Measurements:944.6
ESI学科分类	ENGINEERING
来源库	IEEE
全文链接	https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9786005
引用统计	被引频次[WOS]：9
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/336288
专题	工学院_电子与电气工程系
作者单位	Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
第一作者单位	电子与电气工程系
通讯作者单位	电子与电气工程系
第一作者的第一单位	电子与电气工程系
推荐引用方式 GB/T 7714	Jiang，Zuoheng,Li，Lingling,Wang，Chengcai,et al. Gate-Bias Induced Threshold Voltage (VTH) Instability in P-N Junction/AlGaN/GaN HEMT[J]. IEEE Transactions on Electron Devices,2022,69(7):3654-3659.
APA	Jiang，Zuoheng,Li，Lingling,Wang，Chengcai,Zhao，Junlei,&Hua，Mengyuan.(2022).Gate-Bias Induced Threshold Voltage (VTH) Instability in P-N Junction/AlGaN/GaN HEMT.IEEE Transactions on Electron Devices,69(7),3654-3659.
MLA	Jiang，Zuoheng,et al."Gate-Bias Induced Threshold Voltage (VTH) Instability in P-N Junction/AlGaN/GaN HEMT".IEEE Transactions on Electron Devices 69.7(2022):3654-3659.