一种Micro LED显示器件的制备方法

孙小卫; 王恺; 刘召军; 王立铎; 郝俊杰; 刘皓宸

孙小卫

南方科技大学

南方科技大学

518055 广东省深圳市南山区西丽学苑大道1088号

深圳市思坦科技有限公司

518000 广东省深圳市龙华区大浪街道同胜社区工业园路1号1栋凯豪达大厦十三层1309 (广东,深圳,龙华区)

深圳市思坦科技有限公司

518000 广东省深圳市龙华区大浪街道同胜社区工业园路1号1栋凯豪达大厦十三层1309 (广东,深圳,龙华区)

CN201710499014.6

2017-06-27

CN107331758B

2019-03-05

2019-03-05

授权 ; 权利转移

2019-03-05

授权发明

第一

本发明公开了一种制备Micro LED显示器件的方法，能够实现不同量子点材料的同时转移，也可以通过制备不同的掩模板，实现不同量子点材料的转移，有效地避免了不同量子点材料之间的相互影响，操作简单、转移效率高，易于实现大批量快速生产，提高了高分辨彩色化显示质量，在新型复合显示技术领域具有重要的实用价值。

A micro light-emitting diode (micro LED) display device and a preparation method therefor. The method comprises: preparing a micro LED chip array on a substrate, wherein the micro LED chip array comprises a plurality of micro LED chips. The method further comprises: obtaining a substrate material, wherein the substrate material comprises a substrate and a heat absorption material layer covering the substrate; coating the heat absorption material layer with a quantum dot material; placing the substrate material over the micro LED chip array, with the quantum dot material facing towards the micro LED chip array; irradiating the substrate material with a laser beam array, wherein a plurality of laser beams in the laser beam array correspond to some or all of the micro LED chips in the plurality of micro LED chips on a one-to-one basis; and where the heat absorption material layer on the substrate material is deformed under the irradiation of the laser beam array, transferring the quantum dot material to an upper surface of the micro LED chip that is irradiated by the laser beam array and faces towards the quantum dot material.

H01L33/50 ; H01L2933/0041

H01L33/50

（TRANSFER OF PATENT RIGHT）[2019-12-31][CN]

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唐致明

广州嘉权专利商标事务所有限公司

PatSnap

孙小卫,王恺,刘召军,等. 一种Micro LED显示器件的制备方法[P]. 2019-03-05.