大尺寸单层六方氮化硼单晶或薄膜及制备方法

程春; 王伟军; 王经纬; 石润; 付阳; 王国良; 张海超; 耿派; 蔡念铎; 陈鹏程; 孔德俊

程春

南方科技大学

南方科技大学

518055 广东省深圳市南山区西丽大学城学苑大道1088号

南方科技大学

518055 广东省深圳市南山区西丽大学城学苑大道1088号 (广东,深圳,南山区)

南方科技大学

518055 广东省深圳市南山区西丽大学城学苑大道1088号 (广东,深圳,南山区)

CN201810474244.1

2018-05-17

CN110055589B

2020-11-24

2020-11-24

授权

2020-11-24

授权发明

第一

本发明提供一种大尺寸单层六方氮化硼单晶或薄膜的制备方法。所述制备方法包括：将经过抛光平整处理的衬底置于支撑平面上，并使所述衬底与所述支撑平面形成0.5～15.0μm的间隙；将放置有所述衬底的所述支撑平面置于低压化学气相沉积腔室内，在缓冲气体保护氛围下对所述衬底进行退火处理；向所述低压化学气相沉积腔室中通入六方氮化硼前躯体，以低压化学气相沉积法使所述六方氮化硼前躯体在所述衬底与所述支撑平面正相对的表面发生反应生长成六方氮化硼单晶或薄膜。本发明方法获得的单层六方氮化硼薄膜尺寸大、具有原子级的平整度、晶界密度低、无悬挂键，是一种理想的二维材料衬底材料，在电子工业领域具有广泛地应用前景。

The invention provides a preparation method of large-size single-layer hexagonal boron nitride monocrystal or film. The preparation method comprises following steps: a substrate processed through polishing flattening is placed on a supporting plane with a 0.5-15.0m gap formed between the substrate and the supporting plane; the supporting plane loaded with the substrate is introduced into a lowpressured chemical vapor deposition chamber, under buffer gas protection, the substrate is subjected to annealing treatment; a hexagonal boron nitride precursor is introduced into the low pressure chemical vapor deposition chamber, and low pressure chemical vapor deposition is carried out for reaction growth of the hexagonal boron nitride precursor on the surface of the substrate facing the supporting plane to form hexagonal boron nitride monocrystal or film. The formed single-layer hexagonal boron nitride film is large in size, possesses atom grade flatness, is low in crystal boundary density, contains no dangling bond, is an ideal two dimensional material substrate material, and is promising in application prospect in electron industry.

C23C16/0254 ; C23C16/342 ; C23C16/4583 ; C30B25/00 ; C30B29/403

C30B29/40 ; C30B25/00 ; C23C16/34 ; C23C16/458 ; C23C16/02

（+PATENT GRANT）[2020-11-24][CN]

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李艳丽

深圳中一联合知识产权代理有限公司

PatSnap

程春,王伟军,王经纬,等. 大尺寸单层六方氮化硼单晶或薄膜及制备方法[P]. 2020-11-24.