非易失存储器单元及其制备方法

徐泽东; 陈朗

徐泽东

南方科技大学

南方科技大学

518000 广东省深圳市南山区西丽学苑大道1088号

南方科技大学

518000 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)

南方科技大学

518000 广东省深圳市南山区西丽学苑大道1088号 (广东,深圳,南山区)

CN201711146297.2

2017-11-17

CN107910331B

2020-07-28

2020-07-28

授权

2020-07-28

授权发明

第一

本发明实施例提供了一种非易失存储器单元及其制备方法，该非易失存储器单元包括衬底，位于衬底上的栅极、以及覆盖栅极的功能层，该功能层设置有依次叠置的氧离子蓄积层、氧离子控制层、以及氧化物半导体层，存储器单元的源极和漏极氧离子控制层上，且氧化物半导体层设置于源极和漏极之间，其中，氧离子蓄积层用于存储或释放氧离子，氧离子控制层用于控制氧离子的移动，氧化物半导体层用于起开关作用。本发明实施例提供的非易失存储器单元及其制备方法，能够快速读取和写入，以阻态形式保存数据信息，无需电源持续供电，且能够实现更小尺寸、更高集成度和存储密度的存储器件，进一步降低能耗、提高运行效率。

Embodiments of the invention provide a nonvolatile memory unit and a preparation method thereof. The nonvolatile memory unit comprises a substrate, a gate positioned on the substrate, and a functionallayer for covering the gate; the functional layer is provided with an oxygen ion accumulation layer, an oxygen ion control layer and an oxide semiconductor layer which are stacked in sequence; the source and the drain of the memory unit are arranged on the oxygen ion control layer; the oxide semiconductor layer is arranged between the source and the drain, wherein the oxygen ion accumulation layer is used for storing or releasing oxygen ions; the oxygen ion control layer is used for controlling movement of oxygen ions; and the oxide semiconductor layer is used for playing an on-off effect. Byvirtue of the nonvolatile memory unit and the preparation method thereof provided by the embodiment, quick reading and writing can be realized, and data information can be stored in an impedance state, without needing continuous power supply of the power source; and in addition, smaller dimensions and higher integration degree and storage density of the memory device can be realized, energy consumption can be further lowered, and operating efficiency can be improved.

H01L27/11521 ; H01L27/11568

H01L27/11521 ; H01L27/11568

（+PATENT GRANT）[2020-07-28][CN]

1

1

潘登

北京品源专利代理有限公司

PatSnap

徐泽东,陈朗. 非易失存储器单元及其制备方法[P]. 2020-07-28.