题名 | Adaptive Memory-enhanced Time Delay Reservoir and Its Memristive Implementation |
作者 | |
发表日期 | 2022
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DOI | |
发表期刊 | |
ISSN | 2326-3814
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EISSN | 1557-9956
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卷号 | PP期号:99页码:1-1 |
摘要 | Time Delay Reservoir (TDR) is a hardware-friendly machine learning approach from two perspectives. First, it can prevent the connection overhead of neural networks with increasing neurons. Second, through its dynamic system representation, TDR can also be implemented in hardware by different systems. However, it performs poorly on tasks that involve long-term dependency. In this work, we first introduce a higher-order delay unit, which is capable of accumulating and transferring the long history states in an adaptive manner to further enhance the reservoir memory. Particle Swarm Optimisation is applied to optimize the enhanced degree of memory adaptivity. Our experiments demonstrate its superiority both for short- and long-term memory datasets over seven existing approaches. In light of the hardware-friendly feature of TDR, we further propose a memristive implementation of our adaptive memory-enhanced TDR, where a dynamic memristor and the memristor-based delay element are applied to construct the reservoir. Through circuit simulation, the feasibility of our proposed memristive implementation is verified. The comparisons with different hardware reservoirs show that our proposed memristive implementation is effective both for short- and long-term memory datasets, while exhibiting benefits in terms of smaller circuit area and lower power consumption compared with traditional hardware reservoirs. |
关键词 | |
相关链接 | [IEEE记录] |
收录类别 | |
语种 | 英语
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学校署名 | 其他
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资助项目 | Guangdong Provincial Key Laboratory[2020B121201001]
; Program for Guangdong Introducing Innovative and Enterpreneurial Teams[2017ZT07X386]
; Shenzhen Science and Technology Program[KQTD2016112514355531]
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WOS研究方向 | Computer Science
; Engineering
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WOS类目 | Computer Science, Hardware & Architecture
; Engineering, Electrical & Electronic
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WOS记录号 | WOS:000866519900007
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出版者 | |
EI入藏号 | 20222012127240
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EI主题词 | Circuit simulation
; Learning systems
; Neural networks
; Particle swarm optimization (PSO)
; Time delay
; Timing circuits
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EI分类号 | Electric Network Analysis:703.1.1
; Electronic Circuits:713
; Pulse Circuits:713.4
; Semiconductor Devices and Integrated Circuits:714.2
; Computer Software, Data Handling and Applications:723
; Optimization Techniques:921.5
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ESI学科分类 | COMPUTER SCIENCE
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来源库 | Web of Science
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全文链接 | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9773007 |
引用统计 |
被引频次[WOS]:7
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/347903 |
专题 | 南方科技大学 |
作者单位 | 1.School of Computer Science, University of Birmingham, 1724 Birmingham, Birmingham, United Kingdom of Great Britain and Northern Ireland 2.School of Computer Science, University of Birmingham, Birmingham, Birmingham, United Kingdom of Great Britain and Northern Ireland 3.Computer Science and Engineering, Southern University of Science and Technology, 255310 Shenzhen, Guangdong, China |
推荐引用方式 GB/T 7714 |
Xinming Shi,Leandro L. Minku,Xin Yao. Adaptive Memory-enhanced Time Delay Reservoir and Its Memristive Implementation[J]. IEEE Transactions on Computers,2022,PP(99):1-1.
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APA |
Xinming Shi,Leandro L. Minku,&Xin Yao.(2022).Adaptive Memory-enhanced Time Delay Reservoir and Its Memristive Implementation.IEEE Transactions on Computers,PP(99),1-1.
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MLA |
Xinming Shi,et al."Adaptive Memory-enhanced Time Delay Reservoir and Its Memristive Implementation".IEEE Transactions on Computers PP.99(2022):1-1.
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条目包含的文件 | 条目无相关文件。 |
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