Observation of Magnetism-Induced Topological Edge State in Antiferromagnetic Topological Insulator MnBi4Te7

Xu, Hao-Ke1; Gu, Mingqiang2,3; Fei, Fucong4,5; Gu, Yi-Sheng1; Liu, Dang1; Yu, Qiao-Yan1; Xue, Sha-Sha1; Ning, Xu-Hui1,6; Chen, Bo4,5; Xie, Hangkai4,5; Zhu, Zhen1; Guan, Dandan1; Wang, Shiyong1; Li, Yaoyi1; Liu, Canhua1; Liu, Qihang2,3; Song, Fengqi4,5; Zheng, Hao1; Jia, Jinfeng1

2022-06-01

10.1021/acsnano.2c03622

ACS Nano   影响因子和分区

1936-0851

1936-086X

Breaking time reversal symmetry in a topological insulator may lead to quantum anomalous Hall effect and axion insulator phase. MnBi4Te7 is a recently discovered antiferromagnetic topological insulator with TN similar to 12.5 K, which is composed of an alternatively stacked magnetic layer (MnBi2Te4) and nonmagnetic layer (Bi2Te3). By means of scanning tunneling spectroscopy, we clearly observe the electronic state present at a step edge of a magnetic MnBi2Te4 layer but absent at nonmagnetic Bi2Te3 layers at 4.5 K. Furthermore, we find that as the temperature rises above TN the edge state vanishes, while the point defect induced state persists upon an increase in temperature. These results confirm the observation of magnetism-induced edge states. Our analysis based on an axion insulator theory reveals that the nontrivial topological nature of the observed edge state.

antiferromagnetism topological insulator edge state scanning tunneling microscopy axion insulator

SCI ; EI

英语

NI论文

其他

NSFC[11790313,92065201,11874256,11874258,12074247,12174252,11861161003,12025404,11904165] ; Ministry of Science and Technology of China["2019YFA0308600","2020YFA0309000","2017YFA0303203"] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB28000000] ; Science and Technology Commission of Shanghai Municipality["2019SHZDZX01","19JC1412701","20QA1405100"] ; Natural Science Foundation of Jiangsu Province[BK20190286]

Chemistry ; Science & Technology - Other Topics ; Materials Science

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000820055000001

AMER CHEMICAL SOC

20222812351699

Bismuth compounds ; Electric insulators ; Manganese compounds ; Quantum Hall effect ; Scanning tunneling microscopy ; Tellurium compounds ; Topological insulators ; Topology

Magnetism: Basic Concepts and Phenomena:701.2 ; Combinatorial Mathematics, Includes Graph Theory, Set Theory:921.4 ; Classical Physics; Quantum Theory; Relativity:931

Web of Science

1.Shanghai Jiao Tong Univ, Sch Phys & Astron, Tsung Dao Lee Inst,Shenyang Natl Lab Mat Sci, Key Lab Artificial Struct & Quantum Control,Minis, Shanghai 200240, Peoples R China
2.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
3.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
4.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
5.Nanjing Univ, Coll Phys, Nanjing 210093, Peoples R China
6.Shanghai Jiao Tong Univ, Zhiyuan Coll, Shanghai 200240, Peoples R China

Xu, Hao-Ke,Gu, Mingqiang,Fei, Fucong,et al. Observation of Magnetism-Induced Topological Edge State in Antiferromagnetic Topological Insulator MnBi4Te7[J]. ACS Nano,2022,16:9810-9818.

Xu, Hao-Ke.,Gu, Mingqiang.,Fei, Fucong.,Gu, Yi-Sheng.,Liu, Dang.,...&Jia, Jinfeng.(2022).Observation of Magnetism-Induced Topological Edge State in Antiferromagnetic Topological Insulator MnBi4Te7.ACS Nano,16,9810-9818.

Xu, Hao-Ke,et al."Observation of Magnetism-Induced Topological Edge State in Antiferromagnetic Topological Insulator MnBi4Te7".ACS Nano 16(2022):9810-9818.