High Performance InP-based Quantum Dot Light-Emitting Diodes via the Suppression of Field-Enhanced Electron Delocalization

Li, Haiyang1,2; Bian, Yangyang1; Zhang, Wenjing1; Wu, Zhenghui1,3; Ahn, Tae Kyu2; Shen, Huaibin1; Du, Zuliang1

2022-07-01

10.1002/adfm.202204529

ADVANCED FUNCTIONAL MATERIALS   影响因子和分区

1616-301X

1616-3028

To understand the exciton dynamics due to the electron delocalization in InP-based quantum dot light-emitting diodes (QLEDs), the exciton dynamics are systematically controlled in InP-based QLEDs through varying the shell thicknesses of InP/ZnSe quantum dots (QDs) and the effective electrical field (E-field) across the QDs. It is found that the field-independent energy transfer is effectively suppressed as the shell thickness increases. However, InP/ZnSe QDs with thicker shells only have limited benefit for suppressing the exciton transfer due to field-enhanced electron delocalization in films on electron transport layers or working devices. The field-assisted exciton transfer is mainly driven by the large E-field and field-enhanced electron delocalization in InP/ZnSe QDs. External quantum efficiency of 22.56% is achieved in InP-based QLEDs by reducing the effective E-field (at 2 V bias). The breakthrough luminance of 136 090 cd/m(-2) is achieved at a large bias of 7.2 V, due to the suppression of field-enhanced electron delocalization by the ultra-thick shell.

efficiency roll-offs electron delocalization field-enhanced delocalization InP-based quantum dot light-emitting diodes trapped excitons

SCI ; EI

英语

NI论文

通讯

National Natural Science Foundation of China["61922028","61874039","62005114"] ; Guangdong Basic and Applied Basic Research Foundation[2019A1515110437] ; Innovation Research Team of Science and Technology in Henan Province[20IRTSTHN020] ; National Research Fund[NRF-2022R1A2C2003813] ; Education Reform Project of Henan University[YB-JFZX-2022-11]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000825284300001

WILEY-V C H VERLAG GMBH

20222912367527

Electron transport properties ; Energy transfer ; Excitons ; III-V semiconductors ; Nanocrystals ; Organic light emitting diodes (OLED) ; Quantum efficiency ; Semiconducting indium phosphide ; Semiconductor quantum dots ; Shells (structures)

Structural Members and Shapes:408.2 ; Semiconducting Materials:712.1 ; Compound Semiconducting Materials:712.1.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Inorganic Compounds:804.2 ; Quantum Theory; Quantum Mechanics:931.4 ; Crystalline Solids:933.1

MATERIALS SCIENCE

Web of Science

1.Henan Univ, Sch Mat & Engn, Natl & Local Joint Engn Res Ctr High Efficiency D, Key Lab Special Funct Mat,Minist Educ, Kaifeng 475004, Peoples R China
2.Sungkyunkwan Univ SKKU, Suwon 16419, South Korea
3.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

Li, Haiyang,Bian, Yangyang,Zhang, Wenjing,et al. High Performance InP-based Quantum Dot Light-Emitting Diodes via the Suppression of Field-Enhanced Electron Delocalization[J]. ADVANCED FUNCTIONAL MATERIALS,2022,32.

Li, Haiyang.,Bian, Yangyang.,Zhang, Wenjing.,Wu, Zhenghui.,Ahn, Tae Kyu.,...&Du, Zuliang.(2022).High Performance InP-based Quantum Dot Light-Emitting Diodes via the Suppression of Field-Enhanced Electron Delocalization.ADVANCED FUNCTIONAL MATERIALS,32.

Li, Haiyang,et al."High Performance InP-based Quantum Dot Light-Emitting Diodes via the Suppression of Field-Enhanced Electron Delocalization".ADVANCED FUNCTIONAL MATERIALS 32(2022).