题名 | Straightforward strategy for selecting and tuning substrates for two-dimensional material epitaxy |
作者 | |
通讯作者 | Xu, Hu |
发表日期 | 2022-06-29
|
DOI | |
发表期刊 | |
ISSN | 2475-9953
|
卷号 | 6期号:6 |
摘要 | Wafer-scale two-dimensional (2D) materials grown directly on substrates via epitaxy methods are desired for building high-performance electronic devices. Up to now, the selection of the appropriate substrates has been dominated by trial and error, which has greatly hindered the mass production of 2D materials for device applications. In this paper, based on the evolutionary trend of the formation energy during growth, we propose that the epitaxy of monoelemental 2D materials on metal substrates can be classified into three types, and only the third type with a significant energy benefit has the opportunity to grow into large-scale 2D monolayers. By extensive first-principles calculations, we find that this concept can coincide well with experimental reports when the energy threshold is set to 0.6 eV/atom, which provides a straightforward way to evaluate interlayer interactions between substrates and adsorbates. Furthermore, taking the growth of blue phosphorene (blue-P) on Ag(111) as an example, a heterogeneous epitaxial strategy to achieve a transition in growth type by surface alloying is proposed. We verify the feasibility of this strategy and investigate the nucleation process of blue-P on the Ag2Sb surface alloy. Our findings provide a valid path for substrate selection and tuning, and we believe that this general strategy will stimulate the development of the large-scale synthesis of 2D materials. |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 第一
; 通讯
|
资助项目 | National Natural Science Foundation of China[11974160]
; Science, Technology, and Innovation Commission of Shenzhen Municipality["RCYX20200714114523069","ZDSYS20190902092905285"]
; Guangdong Provincial Key Laboratory of Computational Science and Material Design[2019B030301001]
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WOS研究方向 | Materials Science
|
WOS类目 | Materials Science, Multidisciplinary
|
WOS记录号 | WOS:000823806400002
|
出版者 | |
EI入藏号 | 20222912365752
|
EI主题词 | Metal substrates
; Monolayers
; Silver alloys
; Tuning
|
EI分类号 | Precious Metals:547.1
; Coating Materials:813.2
; Mathematics:921
|
来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:5
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/356189 |
专题 | 理学院_物理系 |
作者单位 | 1.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China 2.Southern Univ Sci & Technol, Shenzhen Key Lab Adv Quantum Funct Mat & Devices, Shenzhen 518055, Peoples R China 3.Southern Univ Sci & Technol, Guangdong Prov Key Lab Computat Sci & Mat Design, Shenzhen 518055, Peoples R China |
第一作者单位 | 物理系 |
通讯作者单位 | 物理系; 南方科技大学 |
第一作者的第一单位 | 物理系 |
推荐引用方式 GB/T 7714 |
He, Chao,Xu, Shaogang,He, Changchun,et al. Straightforward strategy for selecting and tuning substrates for two-dimensional material epitaxy[J]. Physical Review Materials,2022,6(6).
|
APA |
He, Chao.,Xu, Shaogang.,He, Changchun.,Dong, Xingxing.,Yan, Feini.,...&Xu, Hu.(2022).Straightforward strategy for selecting and tuning substrates for two-dimensional material epitaxy.Physical Review Materials,6(6).
|
MLA |
He, Chao,et al."Straightforward strategy for selecting and tuning substrates for two-dimensional material epitaxy".Physical Review Materials 6.6(2022).
|
条目包含的文件 | 条目无相关文件。 |
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