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题名

One-Step Growth of Bilayer 2H-1T’MoTe2 van der Waals Heterostructures with Interlayer-Coupled Resonant Phonon Vibration

作者
通讯作者Liu, Bilu; Chen, Xing-Qiu; Lin, Junhao
共同第一作者Guo, Zenglong; Wang, Lei
发表日期
2022-07-26
DOI
发表期刊
ISSN
1936-0851
EISSN
1936-086X
卷号16期号:7页码:11268-11277
摘要

["2H???1T??? MoTe2 van der Waals heterostructures (vdWHs) have promising applications in optoelectronics due to a seamlessly homogeneous semiconductor???metal coupled interface. However, the existing methods to fabricate such vdWHs involved complicated steps that may deteriorate the interfacial coupling and are also lacking precise thickness control capability. Here, a one-step growth method was developed to controllably grow bilayer 2H???1T??? MoTe2 vdWHs in the small growth window overlapped for both phases. Atomic-resolution low-voltage transmission electron micros-copy shows the distinct moire?? patterns in the bilayer vdWHs, revealing the epitaxial nature of the top 2H phase with the lattice parameters regulated by the underneath 1T??? phase. Such epitaxially stacked bilayer vdWHs modulate the interlayer coupling by resonating their vibration modes, as unveiled by the angle-resolved polarized Raman spectroscopy and first-principles calculations.","Superscript/Subscript Available

关键词
相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
重要成果
NI论文
学校署名
第一 ; 通讯
资助项目
National Natural Science Foundation of China[
WOS研究方向
Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目
Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号
WOS:000831245400001
出版者
EI入藏号
20223312568429
EI主题词
Calculations ; High Resolution Transmission Electron Microscopy ; Raman Spectroscopy ; Tellurium Compounds ; Van Der Waals Forces
EI分类号
Semiconductor Devices And Integrated Circuits:714.2 ; Optical Devices And Systems:741.3 ; Physical Chemistry:801.4 ; Mathematics:921 ; Atomic And Molecular Physics:931.3
来源库
Web of Science
引用统计
被引频次[WOS]:12
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/365003
专题理学院_物理系
量子科学与工程研究院
作者单位
1.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn SIQSE, Dept Phys, Shenzhen 518055, Peoples R China
2.Southern Univ Sci & Technol, Shenzhen Key Lab Adv Quantum Funct Mat & Devices, Shenzhen 518055, Peoples R China
3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
4.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
5.Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
6.Tsinghua Univ, Shenzhen Geim Graphene Ctr, Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China
7.Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China
第一作者单位物理系;  量子科学与工程研究院;  南方科技大学
通讯作者单位物理系;  量子科学与工程研究院;  南方科技大学
第一作者的第一单位物理系;  量子科学与工程研究院
推荐引用方式
GB/T 7714
Guo, Zenglong,Wang, Lei,Han, Mengjiao,等. One-Step Growth of Bilayer 2H-1T’MoTe2 van der Waals Heterostructures with Interlayer-Coupled Resonant Phonon Vibration[J]. ACS Nano,2022,16(7):11268-11277.
APA
Guo, Zenglong.,Wang, Lei.,Han, Mengjiao.,Zhao, Erding.,Zhu, Liang.,...&Lin, Junhao.(2022).One-Step Growth of Bilayer 2H-1T’MoTe2 van der Waals Heterostructures with Interlayer-Coupled Resonant Phonon Vibration.ACS Nano,16(7),11268-11277.
MLA
Guo, Zenglong,et al."One-Step Growth of Bilayer 2H-1T’MoTe2 van der Waals Heterostructures with Interlayer-Coupled Resonant Phonon Vibration".ACS Nano 16.7(2022):11268-11277.
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