| 题名 | Ohmic Contact with a Contact Resistivity of 12 Ω∙mm on p-GaN/AlGaN/GaN |
| 作者 | |
| 通讯作者 | Jiang，Yu Long; Wang，Qing; Yu，Hong Yu |
| 发表日期 | 2022
|
| DOI | |
| 发表期刊 | |
| ISSN | 1558-0563
|
| EISSN | 1558-0563
|
| 卷号 | 43期号:9页码:1412-1415 |
| 摘要 | A robust ohmic contact process with ultralow contact resistivity on p-GaN/AlGaN/GaN is demonstrated. An in-situ removal of GaOX interfacial layer after contact metal deposition is developed. Using the novel Mg/Pt/Au stack as the contact metal, a stable ohmic contact is obtained after 450 degrees C/300 s annealing with ohmic contact resistivity of 12 Omega . mm (1.8 x 10(-5) Omega . cm(2)). A new ohmic contact formation mechanism on p-GaN/AlGaN/GaN is also proposed. |
| 关键词 | |
| 相关链接 | [IEEE记录] |
| 收录类别 | |
| 语种 | 英语
|
| 学校署名 | 第一
|
| 资助项目 | Research on the Fabrication and Mechanism of GaN Power and RF Devices[
|
| WOS研究方向 | Engineering
|
| WOS类目 | Engineering, Electrical & Electronic
|
| WOS记录号 | WOS:000845067200009
|
| 出版者 | |
| EI入藏号 | 20223112531097
|
| EI主题词 | Behavioral Research
; Electric Contactors
; Gallium Nitride
; Gold
; Gold Compounds
; III-V Semiconductors
; Ohmic Contacts
; Platinum
|
| EI分类号 | Ergonomics And Human Factors Engineering:461.4
; Precious Metals:547.1
; Semiconducting Materials:712.1
; Social Sciences:971
|
| ESI学科分类 | ENGINEERING
|
| Scopus记录号 | 2-s2.0-85135212880
|
| 来源库 | Web of Science
|
| 全文链接 | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9834920 |
| 引用统计 |
被引频次[WOS]：7
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/365065 |
| 专题 | 工学院_深港微电子学院 |
| 作者单位 | 1.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China 2.School of Microelectronics, China 3.School of Microelectronics, Fudan University, Shanghai, China |
| 第一作者单位 | 深港微电子学院 |
| 第一作者的第一单位 | 深港微电子学院 |
| 推荐引用方式 GB/T 7714 |
Tang，Chu Ying,Lu，Hong Hao,Qiao，Ze Peng,et al. Ohmic Contact with a Contact Resistivity of 12 Ω∙mm on p-GaN/AlGaN/GaN[J]. IEEE Electron Device Letters,2022,43(9):1412-1415.
|
| APA |
Tang，Chu Ying.,Lu，Hong Hao.,Qiao，Ze Peng.,Jiang，Yang.,Du，Fang Zhou.,...&Yu，Hong Yu.(2022).Ohmic Contact with a Contact Resistivity of 12 Ω∙mm on p-GaN/AlGaN/GaN.IEEE Electron Device Letters,43(9),1412-1415.
|
| MLA |
Tang，Chu Ying,et al."Ohmic Contact with a Contact Resistivity of 12 Ω∙mm on p-GaN/AlGaN/GaN".IEEE Electron Device Letters 43.9(2022):1412-1415.
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| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
| Ohmic_Contact_With_a（5517KB） | -- | -- | 限制开放 | -- | ||
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