Giant Carrier Mobility in Graphene with Enhanced Shubnikov-de Haas Quantum Oscillations: Implications for Low-Power-Consumption Device Applications

Zhang，Ying1; Wang，Shasha1; Hu，Guojing1; Huang，Haoliang1; Zheng，Bo1; Zhou，Yuehui1; Feng，Yan1; Ma，Xiang1; He，Junfeng2; Lu，Yalin1; Gu，Meng3; Chueh，Yu Lun4; Chen，Guorui5; Xiang，Bin1

2022

10.1021/acsanm.2c02166

ACS Applied Nano Materials   影响因子和分区

2574-0970

Graphene devices are susceptible to the surrounding environment. For example, the substrate in contact with graphene influences the device performance because the carriers are confined in two-dimensional (2D) atomic thickness. However, 2D van der Waals dielectric materials used as an interface modifier can provide a path to improve the device quality. In this paper, we report enhanced mobility of up to 540 000 cm2 V-1 s-1 in monolayer graphene sandwiched between two layers of a CrOCl insulator through a dielectric shielding effect. The Shubnikov-de Haas quantum oscillation is also observed with the amplitude linearly decreasing with increasing temperature, consistent with the standard Lifshitz-Kosevich theory. More strikingly, this oscillation persists to a temperature as high as 100 K because of this enhanced mobility. Our work paves a way to improve the mobility of graphene and realize the nontrivial quantum states at high temperatures for the exploration of low-power-consumption device applications in electronics.

carrier mobility dielectric shielding effect monolayer graphene nontrivial quantum state Shubnikov-de Haas quantum oscillation

SCI ; EI

英语

其他

WOS:000840982100001

20223412598681

Carrier mobility ; Dielectric materials ; Electric power utilization ; Monolayers ; Quantum theory ; Shielding ; Van der Waals forces

Electric Power Systems:706.1 ; Dielectric Materials:708.1 ; Semiconducting Materials:712.1 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Chemical Products Generally:804 ; Atomic and Molecular Physics:931.3 ; Quantum Theory; Quantum Mechanics:931.4

2-s2.0-85135980745

Scopus

1.Department of Materials Science & Engineering,CAS Key Laboratory of Materials for Energy Conversion,Anhui Laboratory of Advanced Photon Science and Technology,University of Science and Technology of China,Hefei,230026,China
2.Department of Physics,CAS Key Laboratory of Strongly-coupled Quantum Matter Physics,University of Science and Technology of China,Hefei,230026,China
3.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
4.Department of Materials Science and Engineering,National Tsing Hua University,Hsinchu,30013,Taiwan
5.Key Laboratory of Artificial Structures and Quantum Control,Shenyang National Laboratory for Materials Science,School of Physics and Astronomy,Shanghai Jiao Tong University,Shanghai,200240,China

Zhang，Ying,Wang，Shasha,Hu，Guojing,et al. Giant Carrier Mobility in Graphene with Enhanced Shubnikov-de Haas Quantum Oscillations: Implications for Low-Power-Consumption Device Applications[J]. ACS Applied Nano Materials,2022,5:10860-10866.

Zhang，Ying.,Wang，Shasha.,Hu，Guojing.,Huang，Haoliang.,Zheng，Bo.,...&Xiang，Bin.(2022).Giant Carrier Mobility in Graphene with Enhanced Shubnikov-de Haas Quantum Oscillations: Implications for Low-Power-Consumption Device Applications.ACS Applied Nano Materials,5,10860-10866.

Zhang，Ying,et al."Giant Carrier Mobility in Graphene with Enhanced Shubnikov-de Haas Quantum Oscillations: Implications for Low-Power-Consumption Device Applications".ACS Applied Nano Materials 5(2022):10860-10866.