Ⅱ-Ⅵ族半导体生长应用研究

RESEARCH ON GROWTH AND APPLICATION OF Ⅱ-Ⅵ SEMICONDUCTOR

吴鹏阳

11749035

硕士

物理学

王干

2019-05-14

2019-07-06

哈尔滨工业大学

深圳

拥有直接带隙的宽禁带半导体材料，氮化镓（GaN）和硫化锌（ZnS），被广泛应用于多种光电器件的研发，其中GaN材料是目前发光二极管的核心，而ZnS则可以被应用于太阳能电池，气敏传感器和导电薄膜等应用领域。倘若将这两种材料结合起来，以空穴型（P型）GaN为衬底，外延生长具有电子载流子类型（n型）的ZnS薄膜，即有望制备出具有二极管属性的ZnS/GaN异质结，该异质结可用于紫外发光二极管，紫外光电探测器的研发，在紫外激光器的研发上也具有很大的潜力。过去的两年中，我们采用分子束外延技术，系统研究了高质量ZnS/GaN异质结的外延生长方法，本论文主要汇报了我们在该研究方向上的成果。

Wide bandgap semiconductor materials with direct bandgap, GaN and zinc sulfide (ZnS) are widely used in the research and development of a variety of photoelectric devices. GaN materials are the core of light emitting diodes, while ZnS can be used in solar cells, gas sensors and conductive thin films. If these two materials are combined, ZnS thin films with electron carrier type (N-type) can be epitaxially grown on P-type GaN substrates. It is hopeful that ZnS/GaN heterojunction with diode properties can be fabricated. This heterojunction can be used in the development of ultraviolet light emitting diodes, ultraviolet photodetectors and ultraviolet lasers. It also has great potential in the development of ultraviolet lasers. In the past two years, we have systematically studied the epitaxy growth methods of high quality ZnS/GaN heterojunctions using molecular beam epitaxy (MBE). In this paper, we mainly report our achievements in this field.In this study, we used molecular beam epitaxy (MBE) to deposit ZnS thin films on GaN substrates with ZnS as evaporation source. By controlling the substrate temperature, evaporation source temperature and film thickness, combined with Reflectively High Energy Electron Diffraction (RHEED) spectroscopy, we systematically studied the epitaxy growth process of ultra-thin ZnS/GaN heterojunctions (film thickness below 6 nm). In the epitaxial growth of ZnS/GaN heterojunctions at high temperature (the substrate temperature is higher than 460 C), we have obtained high quality ZnS films. The epitaxy phenomenon of ZnS structure varying with the thickness of the films has been observed by transmission electron microscopy (TEM), which is characterized by a structural phase plane from sphalerite (high temperature phase) to wurtzite (low temperature phase). In view of this structural phase transition, we propose a mechanism of substrate-induced phase transition and demonstrate the growth principle of high-quality ZnS/GaN heterojunctions at high temperature. This study lays a technical foundation for the further development of ZnS/GaN-based semiconductor optoelectronic devices. Keywords: GaN, MBE, ZnS, LED, Detector

GaN ZnS薄膜 分子束外延 发光二极管 探测器

GaN MBE ZnS LED Detector

中文

联合培养

南方科技大学

吴鹏阳. Ⅱ-Ⅵ族半导体生长应用研究[D]. 深圳. 哈尔滨工业大学,2019.