二维材料的转移方法及其场效应晶体管器件的应用研究

TRANSFER OF TWO DIMENSIONAL MATERIALS AND ITS APPLICATION IN FET DEVICES

沈天泽

11749098

硕士

材料物理与化学

赵悦

2019-05-14

2019-07-15

哈尔滨工业大学

深圳

随着晶体管尺寸的持续减小，电子芯片的运算速度和集成度正在不断实现飞跃式地发展。以石墨烯、二硫化钼为代表的二维材料由于其出色的光学和电学特性，已经被广泛应用于光电子学和纳米电子学等领域；在未来的微电子器件的设计与应用中，二维半导体器件将占据十分重要的地位。另一方面，在二维半导体器件的制备与组装过程中，二维材料高效、无损地转移又是十分关键的环节；并且，成功地实现二维材料大面积转移，对推动二维器件的规模化、产业化生产具有十分重要的意义。本文提出了一种高效环保的二维材料大面积转移方法。利用蔗糖在高温下发生的焦糖化反应，以固化的焦糖为介质来完成二维材料的转移。使用这种方法成功完成了对机械剥离的石墨烯、CVD生长的石墨烯薄膜以及CVD生长的二硫化钼的转移。对转移之后的二维材料进行了表征测试，光学显微镜的图像显示转移后的二维材料形貌完整；AFM与TEM图像说明转移后的二维材料表面平整干净；Raman光谱与PL光谱说明转移过程中未引入其它杂质和缺陷。利用糖转移可以实现二维材料对柔性基底的转移，避免了转移过程使用的丙酮等有机溶剂会使柔性基底发生溶解或溶胀的问题，成功将石墨烯转移至PDMS基底和PET基底上，将MoS2转移至PET基底上。同时，可以实现二维材料的图案化转移和二次转移，进一步拓展了电子器件设计的多样性和灵活性。对转移后的二维材料，将其组装成场效应晶体管器件，并进行了电输运性能分析。对于转移后机械剥离的石墨烯FET器件，测试得到的转移特性曲线符合石墨烯的能带结构特征，计算得到的迁移率为13214 cm2/V s；对于转移后CVD的二硫化钼FET器件，测试得到的转移特性曲线说明其开关比为103，计算得到迁移率为0.08 cm2/V s。采用对比实验的方法分析了焦糖对二硫化钼FET器件性能的影响，并尝试分析了原因

As the size of transistors continues to decrease, the computing speed and integration of electronic chips are continually evolving. Two-dimensional materials represented by graphene and MoS2 have been widely used in optoelectronics and nanoelectronics due to their excellent optical and electrical properties. In the future design and application of microelectronic devices, two-dimensional semiconductor devices will occupy a very important position. On the other hand, in the process of preparation and assembly of two-dimensional devices, efficient and non-destructive transfer of two-dimensional materials is a critical link; and, successful implementation of large-area transfer of two-dimensional materials, to promote the scale of two-dimensional devices industrial production is of great significance.This paper proposes an efficient and environmentally friendly method for large-area transfer of two-dimensional materials. The caramelization reaction of sucrose at a high temperature is utilized, and the solidified caramel is used as a medium to complete the transfer of the two-dimensional material. The transfer of mechanically exfoliated graphene, CVD grown graphene films, and CVD-grown MoS2 was successfully accomplished using this method. The two-dimensional materials after transfer were characterized. The images of the optical microscope showed that the two-dimensional material after transfer was intact. The AFM and TEM images showed that the surface of the transferred two-dimensional material was flat and clean; the Raman and PL spectra indicated the transfer process no other impurities and defects were introduced. The transfer of two-dimensional materials to the flexible substrate can be realized by using sugar transfer, and the problem that the organic solvent such as acetone used in the transfer process dissolves or swells the flexible substrate can be avoided, and the graphene is successfully transferred to the PDMS substrate and the PET substrate, and MoS2 is transferred to the PET substrate. At the same time, the pattern transfer and secondary transfer of two-dimensional materials can be realized, further expanding the diversity and flexibility of electronic devices design.The transferred two-dimensional materials were assembled into FET devices and analyzed for electrical transport properties. For the graphene FET device after mechanical transfer after transfer, the transfer characteristic curve obtained by the test conforms to the energy band structure characteristics of graphene, and the calculated mobility is 13214 cm2/V s ; for the transferred CVD molybdenum disulfide FET device, the transfer characteristics obtained by the test The curve shows that the switching ratio is 103 and the calculated mobility is 0.08 cm2/V s. The effect of caramel on the performance of molybdenum disulfide FET devices was analyzed by comparative experiments, and the reasons were analyzed

二维材料 转移方法 石墨烯 二硫化钼 场效应晶体管器件

two-dimensional materials transfer methods graphene MoS2 FET devices

中文

联合培养

南方科技大学

沈天泽. 二维材料的转移方法及其场效应晶体管器件的应用研究[D]. 深圳. 哈尔滨工业大学,2019.