一种铝掺杂半导体量子棒及其制备方法和用途

本发明涉及一种铝掺杂半导体量子棒及其制备方法和用途，所述铝掺杂半导体量子棒具有核壳结构，核为CdSe、CdTe、CdS、ZnSe、CdTe、CuInS、InP、CuZnSe或ZnMnSe中的任意一种或至少两种的混合物，壳层为Al掺杂的壳基材，所述壳基材为CdS、ZnO、ZnS、ZnSe或ZnTe中的任意一种或至少两种的混合物。本发明不改变核材料的结构和组成，而是铝原子融入量子棒壳材料的晶格中，在量子棒表面形成一层钝化层，提高量子棒的光稳定性，不仅稳定性更高，而且不易引起猝灭。

The invention relates to an aluminum-doped semiconductor quantum rod and a preparation method and application thereof. The aluminum-doped semiconductor quantum rod has a core-shell structure, whereina core is made of any one or at least two of CdSe, CdTe, CdS, ZnSe, CdTe, CuInS, InP, CuZnSe or ZnMnSe, and a shell layer is made of an Al-doped shell base material which is made of any one or at least two of CdS, ZnO, ZnS, ZnSe or ZnTe. By integration of aluminum atoms into crystal lattices of the quantum rod shell material without changing structure and composition of the core material, a passivation layer is formed on the surface of the quantum rod, and accordingly light stability of the quantum rod is improved, and high stability and less proneness to quenching are realized.