南方科技大学知识苑(SUSTech KC): Air Stable High Mobility ALD ZnO TFT with HfO2 Passivation Layer Suitable for CMOS-BEOL Integration

题名	Air Stable High Mobility ALD ZnO TFT with HfO2 Passivation Layer Suitable for CMOS-BEOL Integration
作者	Wenhui Wang1 ; Jiqing Lu 2; Jun Lan1 ; Bing Zhou1 ; Yiyang Zhang1 ; Jinxuan Liang1 ; Muhammad Zaheer1 ; Mei Shen1 ; Yida Li1
通讯作者	Yida Li
DOI	10.1109/CSTIC55103.2022.9856860
发表日期	2022
会议名称	2022 IEEE CSTIC
ISBN	978-1-6654-9759-6
会议录名称	2022 China Semiconductor Technology International Conference (CSTIC)
页码	1-4
会议日期	20-21 June 2022
会议地点	Shanghai, China
摘要	An air-stable ALD ZnO TFT with high field-effect mobility of 82 cm2/V·s and high on-off ratio of $5\times 10^{7}$ is realized with an 18 nm thick channel. This is the highest reported mobility value using an ALD process with a low temperature of 200°C. With HfO2 as a passivation layer, the TFT exhibits negligible electrical degradation even after 90 days of exposure in ambient air environment, paving the path for BEOL integration.
关键词	Degradation Electric Potential II-VI Semiconductor Materials Zinc Oxide Thin Film Transistors Hafnium Compounds Transistors
学校署名	第一 ; 通讯
相关链接	[IEEE记录]
收录类别	EI
EI入藏号	20223712740171
EI主题词	Atomic Layer Deposition ; CMOS Integrated Circuits ; Hafnium Oxides ; II-VI Semiconductors ; Passivation ; Temperature ; Thin Film Transistors
EI分类号	Protection Methods:539.2.1 ; Thermodynamics:641.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices And Integrated Circuits:714.2 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2 ; Coating Techniques:813.1 ; Crystal Growth:933.1.2
来源库	IEEE
全文链接	https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9856860
引用统计	被引频次[WOS]：0
成果类型	会议论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/401512
专题	南方科技大学
作者单位	1.Southern University of Science and Technology, Shenzhen, China 2.Harbin Institute of Technology, Harbin, China
第一作者单位	南方科技大学
通讯作者单位	南方科技大学
第一作者的第一单位	南方科技大学
推荐引用方式 GB/T 7714	Wenhui Wang,Jiqing Lu,Jun Lan,et al. Air Stable High Mobility ALD ZnO TFT with HfO2 Passivation Layer Suitable for CMOS-BEOL Integration[C],2022:1-4.