Study on Reverse Recovery of a P-pillar Tunable Super-Junction MOSFET*

Ke Liu1; Wucheng Yuan1; Shaogang Wang2; Chunjian Tan2; Huaiyu Ye1

10.1109/ICEPT56209.2022.9873376

2022

2022 23rd International Conference On Electronic Packaging Technology (icept)

978-1-6654-9906-4

2022 23rd International Conference on Electronic Packaging Technology (ICEPT)

1-4

10-13 Aug. 2022

Dalian, China

In this paper, a novel bubble-shift super junction (SJ) MOSFET structure is proposed, and its main static electrical parameters and reverse recovery characteristics are simulated by TCAD software tool. By designing the P-pillar ion implantation windows with a certain offset, the bubble-shift SJ-MOSFET contains a curved pillar region in the upper half of the P-pillar. In the reverse recovery test of the proposed bubble-shift SJ-MOSFET, the peak reverse recovery current (Irrm) is reduced from 16.04 A to 15.21 A, and the current drop rate (di/dt) is reduced from 1587 A/μs to 815 A/μs. Correspondingly, the proposed device achieves a better reverse recovery characteristic while sacrificing a small fraction of the drain-source breakdown voltage (BV) and drain-source special on-resistance (Ron,sp). Compared with the BV of 700 V and the Ron,sp of 9 mΩ·cm2 of the benchmark SJ-MOSFET. The proposed device has a BV of 650 V and a Ron,sp of 12.4 mΩ·cm2. Mechanistically, the non-uniform depletion of the curved P-pillar reduces the carrier extraction rate, thereby prolonging the reverse current drop time (tf) and increasing the softness factor (S) of the bubble-shift SJ-MOSFET.

Super Junction Reverse Recovery P-pillar Bubble-shift TCAD

第一

IEEE

1.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China
2.Fac. EEMCS, Delft University of Technology, Delft, Netherlands

Ke Liu,Wucheng Yuan,Shaogang Wang,et al. Study on Reverse Recovery of a P-pillar Tunable Super-Junction MOSFET*[C],2022:1-4.