Research on Thermal-Mechanical Properties of GaN Power Module Based on QFN Package by Using Nano Copper/Silver Sinter Paste

Shizhen Li1; Xu Liu2; Jiajie Fan3; Jing Jiang3; Chunjian Tan2; Shaogang Wang2; Bin Xie4; Huaiyu Ye5

10.1109/ICEPT56209.2022.9873399

2022

2022 23rd International Conference On Electronic Packaging Technology (icept）

978-1-6654-9906-4

2022 23rd International Conference on Electronic Packaging Technology (ICEPT)

1-7

10-13 Aug. 2022

Dalian, China

The wide-bandgap semiconductors represented by GaN have a broad application prospect because of their high service temperature and high switch frequency. Quad-Flat-No-Lead (QFN) Package is currently one of the mainstream packaging methods due to its low cost and high efficiency. However, the low reliability of QFN used in GaN devices is still a crucial problem caused by elevated temperatures and the thermal stress induced by the mismatch of coefficient of thermal expansion (CTE). Therefore, it is necessary to control the temperature inner the package and increase the mechanical property of the bonding layer. In this paper, the finite element method (FEM) with thermal-mechanical coupling is performed to optimize the reliability of the bonding layer by adopting sinter nano Cu and silver. Based on the conventional QFN package module, we tried to add different metallization on the bonding surface to decrease the influence of CTE mismatch. We should note that the Anand viscoplastic model was used in the materials of Sintered Ag and lead-free solder paste presented by SAC305, which were the most commonly used in die-attachment. The results showed that the utilization of nano copper/silver paste could hardly facilitate thermal performance although sintered Ag had excellent thermal conductivity. Since the Anand modules of Ag and SAC305 were different, there were some impacts on the stress distribution and deformation. During the bonding process, a large thermal stress generated between die-attachment layer and Package or the PCB. The die-attachment layer formed by nano Ag paste suffered the smaller thermal stress because its CTE is comparable to that of thermal pad. In terms of sintered Ag, the bonding layer generated more elastic strain. As the deformation recovered to initial stage, the stress decreased because of the elastic strain. And we also found that the Ag metallization could decreased the maximum stress of model at heating stage. But Ag metallization suffered larger thermal stress as the temperature decreased. The selection of connection materials and metallization are a crucial part of design the structure of electronic package. And this paper could provide a reference for optimize the package structure to further improve their reliability in future works.

GaN QFN Simulation Sintered Ag Thermal Stress

第一

IEEE

1.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China
2.Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, Delft, The Netherlands
3.Academy for Engineering&Technology, Fudan University, Shanghai, China
4.Hong Kong Applied Science and Technology Research Institute, Hong Kong, China
5.Southern University of Science and Technology, Shenzhen, China

Shizhen Li,Xu Liu,Jiajie Fan,et al. Research on Thermal-Mechanical Properties of GaN Power Module Based on QFN Package by Using Nano Copper/Silver Sinter Paste[C],2022:1-7.