Research on the yield optimization scheme of ESD devices based on FOPLP packaging

Yuhong Li1; Chenshan Gao1; Jinjin Hu2; Jianhui Liu3; Qiangbo Zhang2; Lei Liu2; Guanqiang Song1; Jing Jiang1; Huaiyu Ye4

10.1109/ICEPT56209.2022.9872551

2022

978-1-6654-9906-4

2022 23rd International Conference on Electronic Packaging Technology (ICEPT)

1-4

10-13 Aug. 2022

Dalian, China

In this paper, the relevant failure analysis is carried out for the electric leakage problem of the product in the H3TRB process. It is discovered that ion migration existed in the metal layer in the chip. According to the conditions of ion migration, we have experimentally verified by changing different materials and verifying the reliability of the product, and it can be seen that the failure is strongly related to the air tightness of the material. It is found that when the material's air tightness reached a certain level, the product did not fail in H3TRB (1000H). Therefore, filling materials with better air tightness around the chip can prevent ion migration in the product in H3TRB. This is also the main solution for the DFN 0603 package to achieve high reliability and mass production.

FOPLP reliability air tightness

其他

IEEE

1.Product Research and Development, Sky Chip Interconnection Technology CO., LTD, Shenzhen, China
2.Pingxi Preparatory Team, Sky Chip Interconnection Technology CO,. LTD, Shenzhen, China
3.R&D Design Department, Sky Chip Interconnection Technology CO., LTD, Shenzhen, China
4.Chongqing University, Southern University of Science and Technology, Shenzhen, China

Yuhong Li,Chenshan Gao,Jinjin Hu,et al. Research on the yield optimization scheme of ESD devices based on FOPLP packaging[C],2022:1-4.