题名 | Nanotwinned copper electroplating with halide engineered grain morphologies |
作者 | |
DOI | |
发表日期 | 2022
|
ISBN | 978-1-6654-9906-4
|
会议录名称 | |
页码 | 1-5
|
会议日期 | 10-13 Aug. 2022
|
会议地点 | Dalian, China
|
摘要 | Nanotwinned copper enables superior performances in material mechanics, electricity, and weld reliability, which attracts widespread fundamental research interests and meanwhile shows great application potential as the next-generation electronic interconnect materials in integrated circuits manufacturing and packaging. Halides are indispensably added in nt-Cu electroplating baths. Whereas, effects of halides on plating chemistry and microstructure manipulation are yet to be clearly understood. In this study, the type and concentration of halide are found interdependent with plating current and play significant roles in manipulating the growth and density coherent twin boundaries. Columnar-grained nanotwinned copper of high-density coherent twin lamellar can be electroplated in a wide range of chloride concentration and plating current. While equiaxial-grained nanotwinned copper of mild-density coherent twin lamellar is electroplated with intermediate bromide concentration and small plating current, showing prominent detwinned grain morphologies with further increase of current density or bromide concentration. The mechanism of halide-based microstructures engineering is revealed to be in close relation to differences in inhibiting ability of [gelatin-Cu+-halide] intermediate complex and desorption behaviors of the gelatin molecules anchored. |
关键词 | |
学校署名 | 其他
|
相关链接 | [IEEE记录] |
来源库 | IEEE
|
全文链接 | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9873345 |
引用统计 |
被引频次[WOS]:0
|
成果类型 | 会议论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/401553 |
专题 | 工学院 |
作者单位 | 1.College of Materials Science and Engineering, Shenzhen University, Shenzhen, China 2.College of Engineering, Southern University of Science and Technology, Shenzhen, China 3.Shenzhen Institute of Advanced Technology, CAS, Shenzhen Institute of Advanced Electronic Materials, Shenzhen, China |
推荐引用方式 GB/T 7714 |
Zhen-Jia Peng,Yi Dong,Zhe Li,et al. Nanotwinned copper electroplating with halide engineered grain morphologies[C],2022:1-5.
|
条目包含的文件 | 条目无相关文件。 |
|
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论