An Artificial Neural Network Implemented Using Parallel Dual-Gate Thin-Film Transistors

Hu, Yushen1,2; Lei, Tengteng1; Wang, Yuqi1; Wang, Fei1,2; Wong, Man3,4

2022-09-01

10.1109/TED.2022.3201836

IEEE TRANSACTIONS ON ELECTRON DEVICES   影响因子和分区

0018-9383

1557-9646

Implementing in-memory computation, an artificial neural network (ANN) consisting of thin-film transistors (TFTs) monolithically integrated in each unit of an array of capacitors is constructed. Both single-gate and parallel, dual-gate (DG) TFTs are deployed. The capacitors and the DG TFTs serve as the respective memory and computational elements. The DG TFT offers the capability of amplifying a weak but relevant input signal and suppressing a strong but irrelevant input signal across a synaptic gap, and the storage of charge on the capacitor is pseudostatic because of the exceptionally low oFr-state leakage current of the accompanying address TFT built on a metal-oxide semiconductor. The feasibility of such an ANN is demonstrated using a 4 x 6 array for classifying a specific set of Tetris patterns.

Artificial neural network (ANN) dual gate (DG) metal-oxide semiconductor synapse thin-film transistor (TFT)

SCI

英语

通讯

Innovation and Technology Fund[GHP/013/19SZ] ; Science and Technology Program of Shenzhen[JCYJ20200109140601691]

Engineering ; Physics

Engineering, Electrical & Electronic ; Physics, Applied

WOS:000852217000001

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

ENGINEERING

Web of Science

1.Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China
2.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China
3.Hong Kong Univ Sci & Technol HKUST, Dept Elect & Comp Engn, Hong Kong, Peoples R China
4.Hong Kong Univ Sci & Technol HKUST, Shenzhen Res Inst, Hong Kong, Peoples R China

Hu, Yushen,Lei, Tengteng,Wang, Yuqi,et al. An Artificial Neural Network Implemented Using Parallel Dual-Gate Thin-Film Transistors[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2022,69(10):5574-5579.

Hu, Yushen,Lei, Tengteng,Wang, Yuqi,Wang, Fei,&Wong, Man.(2022).An Artificial Neural Network Implemented Using Parallel Dual-Gate Thin-Film Transistors.IEEE TRANSACTIONS ON ELECTRON DEVICES,69(10),5574-5579.

Hu, Yushen,et al."An Artificial Neural Network Implemented Using Parallel Dual-Gate Thin-Film Transistors".IEEE TRANSACTIONS ON ELECTRON DEVICES 69.10(2022):5574-5579.