Polymeric sidewall transfer lithography

Lo, Yi-Chen1; Cheng, Xing1,2

2022-09-01

10.1088/2399-6528/ac8f18

Journal of Physics Communications   影响因子和分区

2399-6528

This work is to demonstrate a low cost and time-conserving technique to create nano-trenches by transferring nano-scale polymeric sidewalls into substrate. The polymeric sidewall is a vertically spreading layer deposited by spin-coating a polymer solution on a vertical template. By varying processing parameters such as the solution concentration or the spin-coating speed, the dimension of the sidewall can be changed, which, after pattern transfer, also changes the nano-trench dimension. In this work, high-resolution trenches of about 15 nm have been achieved after transferring straight line sidewalls into substrate. Other than straight line sidewall patterns, this method also fabricates ring-shaped patterns including circles, squares, and concentric squares. With various shapes of sidewall patterns, this technique has a potential to implement other practical applications such as fabricating high-resolution nanoimprint molds of 15 nm.

sidewall transfer lithography nanoimprint lithography polymer sidewall high-resolution pattern

ESCI

英语

其他

National Science Foundation[1054137]

Physics

Physics, Multidisciplinary

WOS:000854328700001

IOP Publishing Ltd

Web of Science

1.Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA
2.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China

Lo, Yi-Chen,Cheng, Xing. Polymeric sidewall transfer lithography[J]. Journal of Physics Communications,2022,6(9).

Lo, Yi-Chen,&Cheng, Xing.(2022).Polymeric sidewall transfer lithography.Journal of Physics Communications,6(9).

Lo, Yi-Chen,et al."Polymeric sidewall transfer lithography".Journal of Physics Communications 6.9(2022).