| 题名 | Tandem Red Quantum-Dot Light-Emitting Diodes with External Quantum Efficiency over 34 % |
| 作者 | |
| 通讯作者 | Chen，Shuming |
| DOI | |
| 发表日期 | 2018
|
| ISSN | 0097-966X
|
| EISSN | 2168-0159
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| 会议录名称 | |
| 卷号 | 49
|
| 期号 | 1
|
| 页码 | 977-980
|
| 摘要 | Quantum-dot light-emitting diodes (QLEDs) with tandem structures are expected to be one of the candidate technologies for next generation display due to their advantages of high efficiency and long lifetime. In this work, highly efficient tandem red QLEDs with current efficiency (CE) of 44.91 cd/A and external quantum efficiency (EQE) of 30.10 % are successfully demonstrated by using inter-connecting layer (ICL) based on Al/HATCN/MoO3. The efficiencies are further improved to 51.44 cd/A and 34.4 % by using the liquid metal EGaIn cathode. The developed ICL is stable and reproducible. The demonstrated tandem QLEDs, with high efficiency and long lifetime, would be promising candidates for next generation displays and lighting applications. |
| 关键词 | |
| 学校署名 | 第一
; 通讯
|
| 语种 | 英语
|
| 相关链接 | [Scopus记录] |
| Scopus记录号 | 2-s2.0-85085975642
|
| 来源库 | Scopus
|
| 引用统计 |
被引频次[WOS]：0
|
| 成果类型 | 会议论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/402805 |
| 专题 | 工学院_电子与电气工程系 |
| 作者单位 | Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China |
| 第一作者单位 | 电子与电气工程系 |
| 通讯作者单位 | 电子与电气工程系 |
| 第一作者的第一单位 | 电子与电气工程系 |
| 推荐引用方式 GB/T 7714 |
Su，Qiang,Zhang，Heng,Xia，Fengtian,et al. Tandem Red Quantum-Dot Light-Emitting Diodes with External Quantum Efficiency over 34 %[C],2018:977-980.
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| 条目包含的文件 | 条目无相关文件。 | |||||
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